Dielectric breakdown in high-K gate dielectrics - Mechanism and lifetime assessment -

Annual Proceedings - Reliability Physics (Symposium)

Volumn , Issue , 2007, Pages 36-43

  Okada, Kenji ^a   Ota, Hiroyuki ^b   Nabatame, Toshihide ^a   Toriumi, Akira ^b,c  

^a ASSOCIATION OF SUPER ADVANCED ELECTRONICS TECHNOLOGIES ASET   (Japan)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^c UNIVERSITY OF TOKYO   (Japan)

Author keywords

Breakdown; Dielectrics; Hard breakdown; HfAlO; HfSiON; High k; Reliability; SILC; Soft breakdown; Stress induced leakage current; TDDB

Indexed keywords

ELECTRIC BREAKDOWN; ELECTRIC CONDUCTIVITY; ELECTRIC CURRENTS; HIGH TEMPERATURE APPLICATIONS; MATHEMATICAL MODELS; THRESHOLD VOLTAGE;

GENERATED SUBORDINATE CARRIER INJECTION (GSCI) MODEL; HARD BREAKDOWN; SOFT BREAKDOWN; STRESS-INDUCED LEAKAGE CURRENT;

GATE DIELECTRICS;

EID: 34548728065     PISSN: 00999512     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RELPHY.2007.369865     Document Type: Conference Paper

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