Grain boundary mediated leakage current in polycrystalline HfO2 films

Microelectronic Engineering

Volumn 88, Issue 7, 2011, Pages 1272-1275

  McKenna, K ^a,b   Shluger, A ^a,b   Iglesias, V ^c   Porti, M ^c   Nafria M ^c   Lanza, M ^c   Bersuker, G ^d  

^a TOHOKU UNIVERSITY   (Japan)

^b UNIVERSITY COLLEGE LONDON   (United Kingdom)

^c UNIVERSITAT AUTÒNOMA DE BARCELONA   (Spain)

^d SEMATECH   (United States)

Author keywords

Atomic force microscopy; Density functional theory; Grain boundaries; HfO2; Leakage current

Indexed keywords

CONDUCTIVE ATOMIC FORCE MICROSCOPY; DENSITY FUNCTIONALS; FIRST-PRINCIPLES CALCULATION; HFO2; OXYGEN VACANCY DEFECTS; POLYCRYSTALLINE; TRAP ASSISTED TUNNELLING;

ATOMIC FORCE MICROSCOPY; DENSITY FUNCTIONAL THEORY; ELECTRIC PROPERTIES; ELECTRONIC PROPERTIES; GRAIN BOUNDARIES; GRAIN SIZE AND SHAPE; LEAKAGE CURRENTS; OXIDE FILMS; OXYGEN VACANCIES;

HAFNIUM OXIDES;

EID: 79958063079     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2011.03.024     Document Type: Conference Paper

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