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Journal of Applied Physics

Volumn 107, Issue 8, 2010, Pages

Filamentary model of dielectric breakdown

(1) Blonkowski, S a

a STMICROELECTRONICS (France)

Author keywords

[No Author keywords available]

Indexed keywords

BREAKDOWN ELECTRIC FIELD; CONSTANT VOLTAGE STRESS; DIELECTRIC BREAKDOWN MODEL; DIELECTRIC BREAKDOWNS; DIELECTRIC PERMITTIVITIES; DIELECTRIC THICKNESS; GROWTH PROCESS; INTERFACIAL PROCESS; METAL INSULATOR METALS; METAL OXIDE SEMICONDUCTOR; NUCLEATION AND GROWTH; PHENOMENOLOGICAL DESCRIPTION; PHYSICAL PARAMETERS; RAMP VOLTAGE; RELATIVE VALUE; SURFACE SCALING; WEIBULL; WEIBULL SLOPE;

ELECTRIC BREAKDOWN; ELECTRIC FIELDS; METAL INSULATOR BOUNDARIES; METALLIC COMPOUNDS; MOS DEVICES; SEMICONDUCTOR GROWTH; SMELTING;

WEIBULL DISTRIBUTION;

EID: 77952348770 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3386517 Document Type: Article

Times cited : (23)

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