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Volumn , Issue , 2011, Pages
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Comprehensive physical modeling of forming and switching operations in HfO 2 RRAM devices
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Author keywords
[No Author keywords available]
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Indexed keywords
CONDUCTIVE FILAMENTS;
DRIVING FORCES;
PHYSICAL MECHANISM;
PHYSICAL MODEL;
PHYSICAL MODELING;
SWITCHING OPERATIONS;
ELECTRON DEVICES;
HAFNIUM OXIDES;
MODELS;
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EID: 84856978876
PISSN: 01631918
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1109/IEDM.2011.6131574 Document Type: Conference Paper |
Times cited : (48)
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References (23)
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