High performance GaN-based LEDs on patterned sapphire substrate with patterned composite SiO2/Al2O3 passivation layers and TiO2/Al2O3 DBR backside reflector

Optics Express

Volumn 21, Issue 18, 2013, Pages 21456-21465

  Guo, Hao ^a,b   Zhang, Xiong ^a   Chen, Hongjun ^a   Zhang, Peiyuan ^a   Liu, Honggang ^b   Chang, Hudong ^b   Zhao, Wei ^b   Liao, Qinghua ^c   Cui, Yiping ^a  

^a SOUTHEAST UNIVERSITY   (China)

^b INSTITUTE OF MICROELECTRONICS   (China)

^c NANCHANG UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; ATOMIC LAYER DEPOSITION; GALLIUM ALLOYS; GALLIUM NITRIDE; MIRRORS; PASSIVATION; REFLECTION; SAPPHIRE; SILVER; TITANIUM DIOXIDE;

BACKSIDE REFLECTORS; CURRENT INJECTIONS; GAN BASED LED; GAN-BASED LIGHT-EMITTING DIODES; INDIUM TIN OXIDE LAYERS; LIGHT OUTPUT POWER (LOP); PASSIVATION LAYER; PATTERNED SAPPHIRE SUBSTRATE;

LIGHT EMITTING DIODES;

EID: 84884543845     PISSN: None     EISSN: 10944087     Source Type: Journal    
DOI: 10.1364/OE.21.021456     Document Type: Article

References (38)

1. N. Shibata, T. Uemura, H. Yamaguchi, and T. Yasukawa, "Fabrication of LED based on III-V nitride and its applications," Phys. Status Solidi, A Appl. Res. 200(1), 58-61 (2003).
2. A. I. Zhmakin, "Enhancement of light extraction from light emitting diodes," Phys. Rep. 498(4-5), 189-241 (2011).
3. J. J. Wierer, A. David, and M. M. Megens, "III-nitride photonic-crystal light-emitting diodes with high extraction efficiency," Nat. Photonics 3(3), 163-169 (2009).
4. M. K. Kwon, J. Y. Kim, I. K. Park, K. S. Kim, G. Y. Jung, S. J. Park, J. W. Kim, and Y. C. Kim, "Enhanced emission efficiency of GaN/InGaN multiple quantum well light-emitting diode with an embedded photonic crystal," Appl. Phys. Lett. 92(25), 251110 (2008).
5. K. Kim, J. Choi, J. B. Park, S. C. Jeon, J. S. Kim, and H. M. Lee, "Lattice constant effect of photonic crystals on the light output of blue light-emitting diodes," IEEE Photon. Technol. Lett. 20(17), 1455-1457 (2008).
6. Y. W. Cheng, S. C. Wang, Y. F. Yin, L. Y. Su, and J. J. Huang, "GaN-based LEDs surrounded with a two-dimensional nanohole photonic crystal structure for effective laterally guided mode coupling," Opt. Lett. 36(9), 1611-1613 (2011).
7. Y. J. Lee, H. C. Kuo, T. C. Lu, B. J. Su, and S. C. Wang, "Fabrication and characterization of GaN-based LEDs grown on chemical wet-etched patterned sapphire substrates," J. Electrochem. Soc. 153(12), G1106-G1111 (2006).
8. Y. J. Lee, H. C. Kuo, T. C. Lu, S. C. Wang, K. W. Ng, K. M. Lau, Z. P. Yang, A. Chang, and S. Y. Lin, "Study of GaN-based light-emitting diodes grown on chemical wet-etching-patterned sapphire substrate with V-shaped pits roughening surfaces," J. Lightwave Technol. 26(11), 1455-1463 (2008).
9. J. J. Chen, Y. K. Su, C. L. Lin, S. M. Chen, W. L. Li, and C. C. Kao, "Enhanced output power of GaN-based LEDs with nano-patterned sapphire substrates," IEEE Photon. Technol. Lett. 20(13), 1193-1195 (2008).
10. T. S. Oh, Y. S. Lee, H. Jeong, J. D. Kim, T. H. Seo, and E. K. Suh, "Characteristics of GaN-based light emitting diode grown on circular convex patterned sapphire substrate," Phys. Status Solidi., C Curr. Top. Solid State Phys. 6(2), 589-592 (2009).
11. J. H. Lee, D. Y. Lee, B. W. Oh, and J. H. Lee, "Comparison of InGaN-Based LEDs Grown on Conventional Sapphire and Cone-Shape-Patterned Sapphire Substrate," IEEE Trans. Electron. Dev. 57(1), 157-163 (2010).
12. Y. F. Li, S. You, M. W. Zhu, L. Zhao, W. T. Hou, T. Detchprohm, Y. Taniguchi, N. Tamura, S. Tanaka, and C. Wetzel, "Defect-reduced green GaInN/GaN light-emitting diode on nanopatterned sapphire," Appl. Phys. Lett. 98(15), 151102 (2011).
13. H. Kim, K. K. Choi, K. K. Kim, J. Cho, S. N. Lee, Y. Park, J. S. Kwak, and T. Y. Seong, "Light-extraction enhancement of vertical-injection GaN-based light-emitting diodes fabricated with highly integrated surface textures," Opt. Lett. 33(11), 1273-1275 (2008).
14. B. Sun, L. X. Zhao, T. B. Wei, X. Y. Yi, Z. Q. Liu, G. H. Wang, J. M. Li, and F. T. Yi, "Light extraction enhancement of bulk GaN light-emitting diode with hemisphere-cones-hybrid surface," Opt. Express 20(17), 18537-18544 (2012).
15. Y. H. Jin, F. L. Yang, Q. Q. Li, Z. D. Zhu, J. Zhu, and S. S. Fan, "Enhanced light extraction from a GaN-based green light-emitting diode with hemicylindrical linear grating structure," Opt. Express 20(14), 15818-15825 (2012).
16. S. Kim, S. M. Kim, H. H. Park, D. G. Choi, J. W. Jung, J. H. Jeong, and J. R. Jeong, "Conformally direct imprinted inorganic surface corrugation for light extraction enhancement of light emitting diodes," Opt. Express 20(S5 Suppl 5), A713-A721 (2012).
17. T. Fujii, Y. Gao, R. Sharma, E. L. Hu, S. P. DenBaars, and S. Nakamura, "Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening," Appl. Phys. Lett. 84(6), 855-857 (2004).
18. 2 nanosphere arrays," Thin Solid Films 517(8), 2742-2744 (2009).
19. J. Y. Cho, K. J. Byeon, and H. Lee, "Forming the graded-refractive-index antireflection layers on light-emitting diodes to enhance the light extraction," Opt. Lett. 36(16), 3203-3205 (2011).
20. K. M. Chang, C. C. Lang, and C. C. Cheng, "The silicon nitride film formed by ECR-CVD for GaN-based LED passivation," Phys. Status Solidi, A Appl. Res. 188(1), 175-178 (2001).
21. X. L. Da, X. Guo, L. M. Dong, Y. P. Song, W. W. Ai, and G. D. Shen, "The silicon oxynitride layer deposited at low temperature for high-brightness GaN-based light-emitting diodes," Solid-State Electron. 50(3), 508-510 (2006).
22. G. D. Shen, X. L. Da, X. Guo, Y. X. Zhu, and N. H. Niu, "Effects of the passivation layer deposition temperature on the electrical and optical properties of GaN-based light-emitting diodes," J. Lumin. 127(2), 441-445 (2007).
23. Y. K. Su, H. C. Wang, C. L. Lin, W. B. Chen, and S. M. Chen, "Improvement of AlGaInP light emitting diode by sulfide passivation," IEEE Photon. Technol. Lett. 15(10), 1345-1347 (2003).
24. 3 passivation layers on the surface of InGaN/GaN-based light-emitting diode chips," Thin Solid Films 516(8), 2031-2034 (2008).
25. 2 multilayer stack omnidirectional reflector," IEEE Photon. Technol. Lett. 18(19), 2050-2052 (2006).
26. 2 omnidirectional reflector and n-GaN roughness," IEEE Photon. Technol. Lett. 19(8), 565-567 (2007).
27. 2 DBR backside reflector," J. Lightwave Technol. 26(17), 3131-3136 (2008).
28. 2 DBR backside reflector," J. Lightwave Technol. 29(7), 1033-1038 (2011).
29. 2 Reflector and roughened GaOx surface film," Jpn. J. Appl. Phys. 50(4), 04DG06 (2011).
30. B. Zhang, Z. S. Zhang, J. Xu, Q. Ren, C. L. Jin, Z. J. Yang, Q. Wang, W. H. Chen, X. D. Hu, T. J. Yu, Z. X. Qin, G. Y. Zhang, D. P. Yu, and B. P. Zhang, "Effects of the artificial Ga-nitride/air periodic nanostructures on current injected GaN-based light emitters," Phys. Status Solidi C 2(7), 2858-2861 (2005).
31. R. Sharma, E. D. Haberer, C. Meier, E. L. Hu, and S. Nakamura, "Vertically oriented GaN-based air-gap distributed Bragg reflector structure fabricated using band-gap-selective photoelectrochemical etching," Appl. Phys. Lett. 87(5), 051107 (2005).
32. R. Sharma, Y. S. Choi, C. F. Wang, A. David, C. Weisbuch, S. Nakamura, and E. L. Hu, "Gallium-nitride-based microcavity light-emitting diodes with air-gap distributed Bragg reflectors," Appl. Phys. Lett. 91(21), 211108 (2007).
33. A. Altoukhov, J. Levrat, E. Feltin, J.-F. Carlin, A. Castiglia, R. Butté, and N. Grandjean, "High reflectivity air-gap distributed Bragg reflectors realized by wet etching of AlInN sacrificial layers," Appl. Phys. Lett. 95(19), 191102 (2009).
34. J. H. Ryu, H. Y. Kim, H. K. Kim, Y. S. Katharria, N. Han, J. H. Kang, Y. J. Park, M. Han, B. D. Ryu, K. B. Ko, E. K. Suh, and C. H. Hong, "High performance of InGaN light-emitting diodes by air-gap/GaN distributed Bragg reflectors," Opt. Express 20(9), 9999-10003 (2012).
35. T. C. Lu, T. T. Kao, C. C. Kao, J. T. Chu, K. F. Yeh, L. F. Lin, Y. C. Peng, H. W. Huang, H. C. Kuo, and S. C. Wang, "GaN-based high-Q vertical-cavity light-emitting diodes," IEEE Electron Device Lett. 28(10), 884-886 (2007).
36. S. Fernández, F. B. Naranjo, F. Calle, M. A. Sánchez- García, E. Calleja, P. Vennegues, A. Trampert, and K. H. Ploog, "High-quality distributed Bragg reflectors based on AlxGa1-xN/GaN multilayers grown by molecular-beam epitaxy," Appl. Phys. Lett. 79(14), 2136 (2001).
37. D. Byrne, F. Natali, B. Damilano, A. Dussaigne, N. Grandjean, and J. Massies, "Blue resonant cavity light emitting diodes with a high-Al-content GaN/AlGaN distributed Bragg reflector," Jpn. J. Appl. Phys. 42(Part 2, No. 12B), L1509-L1511 (2003).
38. H. Liu, H. Zhao, J. Hou, D. Liu, and Y. H. Gao, "Enhanced light extraction in AlInGaN UV light-emitting diodes by an embedded AlN/AlGaN distributed Bragg reflector," Chin. Phys. Lett. 29(10), 108501 (2012).