GaN-based high-Q vertical-cavity light-emitting diodes

IEEE Electron Device Letters

Volumn 28, Issue 10, 2007, Pages 884-886

  Lu, Tien Chang ^a   Kao, Tsung Ting ^a   Kao, Chih Chiang ^a   Chu, Jung Tang ^a   Yeh, Kang Fan ^a   Lin, Li Fan ^a   Peng, Yu Chun ^a   Huang, Hung Wen ^a   Kuo, Hao Chung ^a   Wang, Shing Chung ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

GaN; Light emitting diode (LED); Vertical cavity; Vertical cavity LED (VCLED)

Indexed keywords

DISTRIBUTED BRAGG REFLECTORS; ELECTRIC CURRENTS; LIGHT EMITTING DIODES; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SURFACE EMITTING LASERS;

EMISSION LINEWIDTH; VERTICAL-CAVITY LIGHT-EMITTING DIODES;

SEMICONDUCTOR LASERS;

EID: 34948895516     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2007.904906     Document Type: Article

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