High-performance GaN-based vertical-injection light-emitting diodes with TiO2-SiO2 omnidirectional reflector and n-GaN roughness

IEEE Photonics Technology Letters

Volumn 19, Issue 8, 2007, Pages 565-567

  Huang, H W ^a   Kuo, H C ^a   Lai, C F ^a   Lee, C E ^a   Chiu, C W ^a   Lu, T C ^a   Wang, S C ^a   Lin, C H ^b   Leung, K M ^c  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b HighLink Technology Corporation   (Taiwan)

^c POLYTECHNIC UNIVERSITY   (United States)

Author keywords

Flip chip; Light emitting diode (LED); Omnidirectional reflector (ODR)

Indexed keywords

CHARGE INJECTION; ELECTROCHEMICAL ETCHING; MIRRORS; QUANTUM EFFICIENCY; SEMICONDUCTOR DEVICE MANUFACTURE; SILICA; TITANIUM DIOXIDE;

LASER LIFT-OFF; OMNIDIRECTIONAL REFLECTOR; PHOTO-ELECTROCHEMICAL ETCHING; VERTICAL CURRENT SPREADING;

LIGHT EMITTING DIODES;

EID: 34147109157     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2007.893829     Document Type: Article

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