메뉴 건너뛰기




Volumn 29, Issue 7, 2011, Pages 1033-1038

Nitride-based LEDs with high-reflectance and wide-angle ag mirror+SiO 2/TiO2 DBR backside reflector

Author keywords

Ag; distributed Bragg reflector (DBR); GaN; light emitting diode (LED); reflector

Indexed keywords

AG; BACKSIDE REFLECTORS; CURRENT INJECTIONS; DBR; GAN; INCIDENT ANGLES; INCIDENT LIGHT; LIGHT-EMITTING DIODE (LED); NITRIDE BASED LIGHT EMITTING DIODES; OUTPUT POWER; REFLECTOR; TIO;

EID: 79953032284     PISSN: 07338724     EISSN: None     Source Type: Journal    
DOI: 10.1109/JLT.2011.2111416     Document Type: Article
Times cited : (18)

References (14)
  • 1
    • 21244467134 scopus 로고    scopus 로고
    • Nitride based power chip with indium-tin-oxide p-contact and Al back-side reflector
    • C. S. Chang, S. J. Chang, Y. K. Su, W. S. Chen, C. F. Shen, S. C. Shei, and H. M. Lo, "Nitride based power chip with indium-tin-oxide p-contact and Al back-side reflector," Jpn. J. Appl. Phys., vol. 44, pp. 2462-2464, 2005.
    • (2005) Jpn. J. Appl. Phys. , vol.44 , pp. 2462-2464
    • Chang, C.S.1    Chang, S.J.2    Su, Y.K.3    Chen, W.S.4    Shen, C.F.5    Shei, S.C.6    Lo, H.M.7
  • 5
    • 33644885037 scopus 로고    scopus 로고
    • Enhanced light output in InGaN-Based light-emitting diodes with omnidirectional one-dimensional photonic crystals
    • C. H. Lin, J. Y. Tsai, C. C. Kao, H. C. Kuo, C. C. Yu, J. R. Lo, and K. M. Leung, "Enhanced light output in InGaN-Based light-emitting diodes with omnidirectional one-dimensional photonic crystals," Jpn. J. Appl. Phys., vol. 45, pp. 1591-1593, 2006.
    • (2006) Jpn. J. Appl. Phys. , vol.45 , pp. 1591-1593
    • Lin, C.H.1    Tsai, J.Y.2    Kao, C.C.3    Kuo, H.C.4    Yu, C.C.5    Lo, J.R.6    Leung, K.M.7
  • 6
    • 0942277782 scopus 로고    scopus 로고
    • Efficiency enhancement of InGaN/GaN light-emitting diodes with a back-surface distributed bragg reflector
    • Y. S. Zhao, D. L. Hibbard, H. P. Lee, K. Ma, W. So, and H. Liu, "Efficiency enhancement of InGaN/GaN light-emitting diodes with a back-surface distributed bragg reflector," J. Electron. Mater., vol. 32, pp. 1523-1526, 2003.
    • (2003) J. Electron. Mater. , vol.32 , pp. 1523-1526
    • Zhao, Y.S.1    Hibbard, D.L.2    Lee, H.P.3    Ma, K.4    So, W.5    Liu, H.6
  • 8
    • 27144447672 scopus 로고    scopus 로고
    • Nitride-based LEDs with MQW active regions grown by different temperature profiles
    • DOI 10.1109/LPT.2005.853270
    • S. J. Chang, S. C.Wei, Y. K. Su, R. W. Chuang, S. M. Chen, and W. L. Li, "Nitride-based LEDs with MQW active region grown by different temperature profiles," IEEE Photon Tchnol. Lett., vol. 17, no. 9, pp. 1806-1808, Sep. 2005. (Pubitemid 41488259)
    • (2005) IEEE Photonics Technology Letters , vol.17 , Issue.9 , pp. 1806-1808
    • Chang, S.-J.1    Wei, S.C.2    Su, Y.K.3    Chuang, R.W.4    Chen, S.M.5    Li, W.L.6
  • 12
    • 0026819254 scopus 로고
    • Thermal annealing effects on p-type Mg-doped GaN films
    • S. Nakamura, T. Mukai, M. Senoh, and N. Iwasa, "Thermal annealing effects on p-type Mg-doped GaN films," Jpn. J. Appl. Phys., vol. 31, pp. 139-142, 1992.
    • (1992) Jpn. J. Appl. Phys. , vol.31 , pp. 139-142
    • Nakamura, S.1    Mukai, T.2    Senoh, M.3    Iwasa, N.4
  • 13
    • 0026867861 scopus 로고
    • Hole compensation mechanism of p-type GaN films
    • S. Nakamura, N. Iwasa, M. Senoh, and T. Mukai, "Hole compensation mechanism of p-type GaN films," Jpn. J. Appl. Phys., vol. 31, pp. 1258-1266, 1992.
    • (1992) Jpn. J. Appl. Phys. , vol.31 , pp. 1258-1266
    • Nakamura, S.1    Iwasa, N.2    Senoh, M.3    Mukai, T.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.