-
1
-
-
21244467134
-
Nitride based power chip with indium-tin-oxide p-contact and Al back-side reflector
-
C. S. Chang, S. J. Chang, Y. K. Su, W. S. Chen, C. F. Shen, S. C. Shei, and H. M. Lo, "Nitride based power chip with indium-tin-oxide p-contact and Al back-side reflector," Jpn. J. Appl. Phys., vol. 44, pp. 2462-2464, 2005.
-
(2005)
Jpn. J. Appl. Phys.
, vol.44
, pp. 2462-2464
-
-
Chang, C.S.1
Chang, S.J.2
Su, Y.K.3
Chen, W.S.4
Shen, C.F.5
Shei, S.C.6
Lo, H.M.7
-
2
-
-
0038664230
-
InGaN/GaN light-emitting diodes with a reflector at the backside of sapphire substrates
-
Y. P. Hsu, S. J. Chang, Y. K. Su, C. S. Chang, S. C. Shei, Y. C. Lin, C. H. Kuo, L. W. Wu, and S. C. Chen, "InGaN/GaN light-emitting diodes with a reflector at the backside of sapphire substrates," J. Electron. Mater., vol. 32, pp. 403-406, 2003.
-
(2003)
J. Electron. Mater.
, vol.32
, pp. 403-406
-
-
Hsu, Y.P.1
Chang, S.J.2
Su, Y.K.3
Chang, C.S.4
Shei, S.C.5
Lin, Y.C.6
Kuo, C.H.7
Wu, L.W.8
Chen, S.C.9
-
3
-
-
0036493182
-
High-efficiency InGaN-GaN MQW green light-emitting diodes with CART and DBR structures
-
DOI 10.1109/2944.999182, PII S1077260X0203770X
-
C. H. Chen, S. J. Chang, Y. K. Su, G. C. Chi, J. K. Sheu, and J. F. Chen, "High-efficiency InGaN-GaN MQW green light-emitting diodes with CART and DBR structures," J. Quantum Electron., vol. 8, no. 2, pp. 284-288, Mar./Apr. 2002. (Pubitemid 34659058)
-
(2002)
IEEE Journal on Selected Topics in Quantum Electronics
, vol.8
, Issue.2
, pp. 284-288
-
-
Chen, C.H.1
Chang, S.J.2
Su, Y.K.3
Chi, G.C.4
Sheu, J.K.5
Chen, J.F.6
-
4
-
-
58149468074
-
2 omnidirectional reflector
-
2 omnidirectional reflector," Semicond. Sci. Technol., vol. 23, pp. 1-6, 2008.
-
(2008)
Semicond. Sci. Technol.
, vol.23
, pp. 1-6
-
-
Huang, H.W.1
Lin, C.H.2
Yu, C.C.3
Lee, B.D.4
Kuo, H.C.5
Leung, K.M.6
Wang, S.C.7
-
5
-
-
33644885037
-
Enhanced light output in InGaN-Based light-emitting diodes with omnidirectional one-dimensional photonic crystals
-
C. H. Lin, J. Y. Tsai, C. C. Kao, H. C. Kuo, C. C. Yu, J. R. Lo, and K. M. Leung, "Enhanced light output in InGaN-Based light-emitting diodes with omnidirectional one-dimensional photonic crystals," Jpn. J. Appl. Phys., vol. 45, pp. 1591-1593, 2006.
-
(2006)
Jpn. J. Appl. Phys.
, vol.45
, pp. 1591-1593
-
-
Lin, C.H.1
Tsai, J.Y.2
Kao, C.C.3
Kuo, H.C.4
Yu, C.C.5
Lo, J.R.6
Leung, K.M.7
-
6
-
-
0942277782
-
Efficiency enhancement of InGaN/GaN light-emitting diodes with a back-surface distributed bragg reflector
-
Y. S. Zhao, D. L. Hibbard, H. P. Lee, K. Ma, W. So, and H. Liu, "Efficiency enhancement of InGaN/GaN light-emitting diodes with a back-surface distributed bragg reflector," J. Electron. Mater., vol. 32, pp. 1523-1526, 2003.
-
(2003)
J. Electron. Mater.
, vol.32
, pp. 1523-1526
-
-
Zhao, Y.S.1
Hibbard, D.L.2
Lee, H.P.3
Ma, K.4
So, W.5
Liu, H.6
-
7
-
-
60149101951
-
2DBR backside reflector
-
Sep
-
2 DBR backside reflector," J. Lightw. Technol., vol. 26, no. 17, pp. 3131-3136, Sep. 2008.
-
(2008)
J. Lightw. Technol.
, vol.26
, Issue.17
, pp. 3131-3136
-
-
Chang, S.J.1
Shen, C.F.2
Hsieh, M.H.3
Kuo, C.T.4
Ko, T.K.5
Chen, W.S.6
Shei, S.C.7
-
8
-
-
27144447672
-
Nitride-based LEDs with MQW active regions grown by different temperature profiles
-
DOI 10.1109/LPT.2005.853270
-
S. J. Chang, S. C.Wei, Y. K. Su, R. W. Chuang, S. M. Chen, and W. L. Li, "Nitride-based LEDs with MQW active region grown by different temperature profiles," IEEE Photon Tchnol. Lett., vol. 17, no. 9, pp. 1806-1808, Sep. 2005. (Pubitemid 41488259)
-
(2005)
IEEE Photonics Technology Letters
, vol.17
, Issue.9
, pp. 1806-1808
-
-
Chang, S.-J.1
Wei, S.C.2
Su, Y.K.3
Chuang, R.W.4
Chen, S.M.5
Li, W.L.6
-
9
-
-
20444384372
-
Nitride-based flip-chip ITO LEDs
-
DOI 10.1109/TADVP.2005.846941
-
S. J. Chang, C. S. Chang, Y. K. Su, C. T. Lee, W. S. Chen, C. F. Shen, Y. P. Hsu, S. C. Shei, and H. M. Lo, "Nitride-based flip-chip ITO LEDs," IEEE Trans. Adv. Packag., vol. 28, no. 2, pp. 273-277, May 2005. (Pubitemid 40794331)
-
(2005)
IEEE Transactions on Advanced Packaging
, vol.28
, Issue.2
, pp. 273-277
-
-
Chang, S.J.1
Chang, C.S.2
Su, Y.K.3
Lee, C.T.4
Chen, W.S.5
Shen, C.F.6
Hsu, Y.P.7
Shei, S.C.8
Lo, H.M.9
-
10
-
-
2942708198
-
Nitride-based LEDs with 800°C grown p-AlInGaN-GaN douple-cap layers
-
Jun
-
S. J. Chang, L. W. Wu, Y. K. Su, Y. P. Hsu, W. C. Lai, J. M. Tsai, J. K. Sheu, and C. T. Lee, "Nitride-based LEDs with 800°C grown p-AlInGaN-GaN douple-cap layers," IEEE Photon. Technol. Lett., vol. 16, no. 6, pp. 1447-1449, Jun. 2004.
-
(2004)
IEEE Photon. Technol. Lett.
, vol.16
, Issue.6
, pp. 1447-1449
-
-
Chang, S.J.1
Wu, L.W.2
Su, Y.K.3
Hsu, Y.P.4
Lai, W.C.5
Tsai, J.M.6
Sheu, J.K.7
Lee, C.T.8
-
11
-
-
0242696158
-
Highly reliable nitride based LEDs with SPS+ITO upper contact
-
Nov
-
S. J. Chang, C. S. Chang, Y. K. Su, R. W. Chuang, Y. C. Lin, S. C. Shei, H. M. Lo, H. Y. Lin, and J. C. Ke, "Highly reliable nitride based LEDs with SPS+ITO upper contact," IEEE J. Quantum Electron., vol. 39, no. 11, pp. 1439-1443, Nov. 2003.
-
(2003)
IEEE J. Quantum Electron.
, vol.39
, Issue.11
, pp. 1439-1443
-
-
Chang, S.J.1
Chang, C.S.2
Su, Y.K.3
Chuang, R.W.4
Lin, Y.C.5
Shei, S.C.6
Lo, H.M.7
Lin, H.Y.8
Ke, J.C.9
-
12
-
-
0026819254
-
Thermal annealing effects on p-type Mg-doped GaN films
-
S. Nakamura, T. Mukai, M. Senoh, and N. Iwasa, "Thermal annealing effects on p-type Mg-doped GaN films," Jpn. J. Appl. Phys., vol. 31, pp. 139-142, 1992.
-
(1992)
Jpn. J. Appl. Phys.
, vol.31
, pp. 139-142
-
-
Nakamura, S.1
Mukai, T.2
Senoh, M.3
Iwasa, N.4
-
13
-
-
0026867861
-
Hole compensation mechanism of p-type GaN films
-
S. Nakamura, N. Iwasa, M. Senoh, and T. Mukai, "Hole compensation mechanism of p-type GaN films," Jpn. J. Appl. Phys., vol. 31, pp. 1258-1266, 1992.
-
(1992)
Jpn. J. Appl. Phys.
, vol.31
, pp. 1258-1266
-
-
Nakamura, S.1
Iwasa, N.2
Senoh, M.3
Mukai, T.4
-
14
-
-
70350719126
-
GaN-Based LED with embedded microlens-like structure
-
W. C. Lai, L. C. Peng, M. N. Chang, S. C. Shei, Y. P. Hsu, and J. K. Sheu, "GaN-Based LED with embedded microlens-like structure," J. Electrochem. Soc., vol. 156, pp. 976-978, 2009.
-
(2009)
J. Electrochem. Soc.
, vol.156
, pp. 976-978
-
-
Lai, W.C.1
Peng, L.C.2
Chang, M.N.3
Shei, S.C.4
Hsu, Y.P.5
Sheu, J.K.6
|