Comparison of InGaN-based LEDs grown on conventional sapphire and cone-shape-patterned sapphire substrate

IEEE Transactions on Electron Devices

Volumn 57, Issue 1, 2010, Pages 157-163

  Lee, Jae Hoon ^a   Lee, Dong Yul ^a   Oh, Bang Won ^a   Lee, Jung Hee ^b  

^a Samsung Advanced Institute of Technology (SAIT)   (South Korea)

^b Kyungpook National University   (South Korea)

Author keywords

Compressive stress; Dislocation; External efficiency; GaN; Light emitting diode (LED); Patterned sapphire

Indexed keywords

COMPRESSIVE STRAIN; CRYSTAL QUALITIES; EPITAXIAL LATERAL OVERGROWTH; EXTERNAL EFFICIENCY; EXTERNAL QUANTUM EFFICIENCY; EXTRACTION EFFICIENCIES; FORWARD CURRENTS; GAN; GAN LIGHT-EMITTING DIODES; GROWTH MODES; HIGH QUALITY; INGAN-BASED LED; INGAN/GAN; METALORGANIC CHEMICAL VAPOR DEPOSITION; OUTPUT POWER; PATTERNED SAPPHIRE; PATTERNED SAPPHIRE SUBSTRATE; SAPPHIRE SUBSTRATES; SURFACE PATTERN;

COMPRESSIVE STRESS; DIODES; DISLOCATIONS (CRYSTALS); EPITAXIAL GROWTH; EXTRACTION; GALLIUM NITRIDE; LATTICE MISMATCH; LIGHT EMISSION; LIGHT EMITTING DIODES; METAL RECOVERY; METALLORGANIC CHEMICAL VAPOR DEPOSITION; ORGANIC CHEMICALS; ORGANIC LIGHT EMITTING DIODES (OLED); SAPPHIRE; SUBSTRATES; TENSILE STRESS;

GALLIUM ALLOYS;

EID: 73349085550     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2009.2034495     Document Type: Article

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