SCOPUS 정보 검색 플랫폼

Volumn 127, Issue 2, 2007, Pages 441-445

Effects of the passivation layer deposition temperature on the electrical and optical properties of GaN-based light-emitting diodes

Author keywords

GaN LEDs; Passivation layer; PECVD; Temperature

Indexed keywords

DEGRADATION; LIGHT EMITTING DIODES; LIGHT REFLECTION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; THERMAL EFFECTS;

DEPOSITION TEMPERATURE; PASSIVATION LAYER;

PASSIVATION;

EID: 34547743824 PISSN: 00222313 EISSN: None Source Type: Journal
DOI: 10.1016/j.jlumin.2007.02.002 Document Type: Article

Times cited : (8)

References (14)

1
- 33747601132
- Uchida Y., and Taguchi T. Opt. Eng. 44 (2005) 124003
- (2005) Opt. Eng. , vol.44 , pp. 124003
- Uchida, Y.¹ Taguchi, T.²

2
- 33747588318
- You C. Opt. Eng. 44 (2005) 111307
- (2005) Opt. Eng. , vol.44 , pp. 111307
- You, C.¹

3
- 0033740001
- Kawakami Y., Narukawa Y., Omae K., Fujita S., and Nakamura S. Phys. Status Solidi A 178 (2000) 331
- (2000) Phys. Status Solidi A , vol.178 , pp. 331
- Kawakami, Y.¹ Narukawa, Y.² Omae, K.³ Fujita, S.⁴ Nakamura, S.⁵

4
- 0036732192
- Huh C., Lee J.-M., Kim D.-J., and Park S.-J. J. Appl. Phys. 92 (2002) 2248
- (2002) J. Appl. Phys. , vol.92 , pp. 2248
- Huh, C.¹ Lee, J.-M.² Kim, D.-J.³ Park, S.-J.⁴

5
- 0038311836
- Huh C., Lee K.-S., Kang E.-J., and Park S.-J. J. Appl. Phys. 93 (2003) 9383
- (2003) J. Appl. Phys. , vol.93 , pp. 9383
- Huh, C.¹ Lee, K.-S.² Kang, E.-J.³ Park, S.-J.⁴

6
- 0036986746
- Huh C., Lee K.-S., and Park S.-J. Proc. SPIE 4776 (2002) 114
- (2002) Proc. SPIE , vol.4776 , pp. 114
- Huh, C.¹ Lee, K.-S.² Park, S.-J.³

7
- 28044470075
- Kang E.-J., Huh C., Lee S.-H., Jung J.-J., Lee S.-J., and Park S.-J. Electrochem. Solid-State Lett. 8 (2005) G327
- (2005) Electrochem. Solid-State Lett. , vol.8
- Kang, E.-J.¹ Huh, C.² Lee, S.-H.³ Jung, J.-J.⁴ Lee, S.-J.⁵ Park, S.-J.⁶

8
- 1542315187
- Fujii T., Gao Y., Sharma R., Hu E.L., DenBaars S.P., and Nakamura S. Appl. Phys. Lett. 84 (2004) 855
- (2004) Appl. Phys. Lett. , vol.84 , pp. 855
- Fujii, T.¹ Gao, Y.² Sharma, R.³ Hu, E.L.⁴ DenBaars, S.P.⁵ Nakamura, S.⁶

9
- 29344442794
- Nanhui N., Huaibing W., Jianping L., Naixin L., Yanhui X., Jun H., Jun D., and Guangdi S. J. Crystal Growth 286 (2006) 209
- (2006) J. Crystal Growth , vol.286 , pp. 209
- Nanhui, N.¹ Huaibing, W.² Jianping, L.³ Naixin, L.⁴ Yanhui, X.⁵ Jun, H.⁶ Jun, D.⁷ Guangdi, S.⁸

10
- 0038555019
- Lee J.W., Mackenzie K.D., Johnson D., Shul R.J., Hahn Y.B., Hays D.C., Abernaty C.R., Ren F., and Pearton S.J. J. Vac. Sci. Technol. A 17 (1999) 2183
- (1999) J. Vac. Sci. Technol. A , vol.17 , pp. 2183
- Lee, J.W.¹ Mackenzie, K.D.² Johnson, D.³ Shul, R.J.⁴ Hahn, Y.B.⁵ Hays, D.C.⁶ Abernaty, C.R.⁷ Ren, F.⁸ Pearton, S.J.⁹

11
- 0032089821
- Lee J.W., Mackenzie K., Johnson D., shul R.J., Pearton S.J., and Ren F. Solid-State Electron. 42 (1998) 1021
- (1998) Solid-State Electron. , vol.42 , pp. 1021
- Lee, J.W.¹ Mackenzie, K.² Johnson, D.³ shul, R.J.⁴ Pearton, S.J.⁵ Ren, F.⁶

12
- 33646524055
- Da X., Guo X., Dong L., Song Y., Ai W., and Shen G. Solid-State Electron. 50 (2006) 508
- (2006) Solid-State Electron. , vol.50 , pp. 508
- Da, X.¹ Guo, X.² Dong, L.³ Song, Y.⁴ Ai, W.⁵ Shen, G.⁶

13
- 21544457842
- Lin M.E., Ma Z., Huang F.Y., Fan Z.F., Allen L.H., and Morkoc H. Appl. Phys. Lett. 64 (1994) 1003
- (1994) Appl. Phys. Lett. , vol.64 , pp. 1003
- Lin, M.E.¹ Ma, Z.² Huang, F.Y.³ Fan, Z.F.⁴ Allen, L.H.⁵ Morkoc, H.⁶

14
- 0037439579
- Motayed A., Bathe R., Wood M.C., Diouf O.S., Vispute R.D., and Noor Mohammad S. J. Appl. Phys. 93 (2003) 1087
- (2003) J. Appl. Phys. , vol.93 , pp. 1087
- Motayed, A.¹ Bathe, R.² Wood, M.C.³ Diouf, O.S.⁴ Vispute, R.D.⁵ Noor Mohammad, S.⁶

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.