Improvement of brightness with Al2O3 passivation layers on the surface of InGaN/GaN-based light-emitting diode chips

Thin Solid Films

Volumn 516, Issue 8, 2008, Pages 2031-2034

  So, Soon Jin ^a   Park, Choon Bae ^b  

^a Knowledge On Inc   (South Korea)

^b Wonkwang University   (South Korea)

Author keywords

Al2O3; GaN; InGaN; LED; Packaged lamp; Sputtering system

Indexed keywords

ALUMINA; BIAS VOLTAGE; LIGHT EMITTING DIODES; PASSIVATION; SEMICONDUCTING INDIUM COMPOUNDS;

PACKAGED LAMPS; SPUTTERING SYSTEMS;

MICROPROCESSOR CHIPS;

EID: 38649117589     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2007.07.143     Document Type: Article

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