Study of GaN-based light-emitting diodes grown on chemical wet-etching-patterned sapphire substrate with V-shaped pits roughening surfaces

Journal of Lightwave Technology

Volumn 26, Issue 11, 2008, Pages 1455-1463

  Lee, Ya Ju ^a   Kuo, Hao Chung ^a   Lu, Tien Chang ^a   Wang, Shing Chung ^a   Ng, Kar Wai ^b   Lau, Kei May ^b   Yang, Zu Po ^c   Chang, Allan Shih Ping ^d   Lin, Shawn Yu ^c  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

^c Research Rensselaer Polytechnic Institute   (United States)

^d LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

Author keywords

Epitaxial growth; Light emitting diodes (LEDs); Optical device fabrication

Indexed keywords

ETCHING; EXTRACTION; GALLIUM; GALLIUM ALLOYS; GALLIUM COMPOUNDS; GALLIUM NITRIDE; LIGHT EMISSION; LIGHT EMITTING DIODES; LUMINESCENCE; ORGANIC LIGHT EMITTING DIODES (OLED); PHOTONICS; SAPPHIRE; SEMICONDUCTING GALLIUM; SEMICONDUCTOR QUANTUM DOTS; SUBSTRATES;

EXTERNAL QUANTUM EFFICIENCY (EQE); GALLIUM NITRIDE (GAN); GAN BASED LIGHT EMITTING DIODES; INTERNAL QUANTUM EFFICIENCY (IQE); LIGHT EXTRACTION EFFICIENCY; LIGHT-EMITTING; PATTERNED SAPPHIRE SUBSTRATE (PSS); PERFORMANCE ENHANCEMENTS; SAPPHIRE SUBSTRATES; TEMPERATURE DEPENDENT PHOTOLUMINESCENCE (TRPL); THREADING DISLOCATION (TD); TOP SURFACE; WET ETCHING;

QUANTUM EFFICIENCY;

EID: 46349087416     PISSN: 07338724     EISSN: None     Source Type: Journal    
DOI: 10.1109/JLT.2008.922151     Document Type: Article

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