Improvement of AlGaInP light emitting diode by sulfide passivation

IEEE Photonics Technology Letters

Volumn 15, Issue 10, 2003, Pages 1345-1347

  Su, Y K ^a   Wang, H C ^a   Lin, C L ^a   Chen, W B ^a   Chen, S M ^b  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b Epitech Technology Corporation   (Taiwan)

Author keywords

AlGaInP; Fresnel loss; Leakage current; Light emitting diode (LED); Passivation; Roughness; Sulfide

Indexed keywords

CHARGE CARRIERS; CURRENT VOLTAGE CHARACTERISTICS; LEAKAGE CURRENTS; PASSIVATION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM WELLS; SULFUR COMPOUNDS; SURFACE ROUGHNESS;

ALUMINUM GALLIUM INDIUM PHOSPHIDE LIGHT EMITTING DIODE; FRESNEL LOSS; SULFIDE PASSIVATION;

LIGHT EMITTING DIODES;

EID: 0141987603     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2003.818064     Document Type: Article

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