Blue Resonant Cavity Light Emitting Diodes with a High-Al-Content GaN/ AlGaN Distributed Bragg Reflector

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 42, Issue 12 B, 2003, Pages

  Byrne, Declan ^a   Natali, Franck ^a   Damilano, Benjamin ^a   Dussaigne, Amelie ^a   Grandjean, Nicolas ^a   Massies, Jean ^a  

^a CRHEA CNRS   (France)

Author keywords

GaN AlGaN distributed Bragg reflector; InGaN MQWs; MBE; Microcavity; RCLED; Surface emitter; VCSEL

Indexed keywords

BRAGG CELLS; CAVITY RESONATORS; CRYSTAL LATTICES; DISLOCATIONS (CRYSTALS); ELECTRODES; GALLIUM NITRIDE; LIGHT EMISSION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MIRRORS; MOLECULAR BEAM EPITAXY; OPTICAL PROPERTIES; REACTIVE ION ETCHING;

GAN/ALGAN DISTRIBUTED BRAGG REFLECTOR; INGAN MQW; MICROCAVITY; RCLED; SURFACE EMMITER; VCSEL;

LIGHT EMITTING DIODES;

EID: 1342284862     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.42.l1509     Document Type: Article

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