Enhanced Light Extraction in AlInGaN UV Light-Emitting Diodes by an Embedded AlN/AlGaN Distributed Bragg Reflector

Chinese Physics Letters

Volumn 29, Issue 10, 2012, Pages

  Liu, Hui ^a   Zhao, Heng ^a   Hou, Jin ^b   Liu, Dan ^a   Gao, Yi Hua ^a  

^a HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

^b SOUTH CENTRAL UNIVERSITY FOR NATIONALITIES   (China)

Author keywords

[No Author keywords available]

Indexed keywords

DISTRIBUTED BRAGG REFLECTORS; GALLIUM NITRIDE; III-V SEMICONDUCTORS; LIGHT EMITTING DIODES; OPTICAL PROPERTIES; REFLECTION; SAPPHIRE; SUBSTRATES; TRANSFER MATRIX METHOD;

DISTRIBUTED-BRAGG-REFLECTORS; LAYERED MEDIA; LIGHT EXTRACTION; LIGHT-EXTRACTION EFFICIENCY; MODE MATCHING TECHNIQUE; PEAK REFLECTIVITY; SCATTERING MATRIX APPROACH; SIMULATION TECHNIQUE; ULTRAVIOLET LIGHT EMITTING DIODES; ULTRAVIOLET LIGHT-EMITTING DIODES;

ALUMINUM NITRIDE;

EID: 84867461719     PISSN: 0256307X     EISSN: 17413540     Source Type: Journal    
DOI: 10.1088/0256-307X/29/10/108501     Document Type: Article

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