Characteristics of GaN-based light emitting diode grown on circular convex patterned sapphire substrate

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 6, Issue 2, 2009, Pages 589-592

  Oh, Tae Su ^a   Lee, Yong Seok ^a   Jeong, Hyun ^a   Kim, Jan Di ^a   Seo, Tae Hun ^a   Suh, Eun Kyung ^a  

^a Chonbuk National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLINE PROPERTIES; CRYSTALLINE QUALITY; DISLOCATION DENSITIES; EFFECTIVE SUPPRESSION; GAN-BASED LIGHT-EMITTING DIODES; INTERNAL QUANTUM EFFICIENCY; LIGHT OUTPUT POWER; METALORGANIC CHEMICAL VAPOR DEPOSITION; MICRO RAMAN SPECTROSCOPY; NEAR-FIELD SCANNING OPTICAL MICROSCOPE; NSOM IMAGES; OUTPUT POWER; PATTERNED SAPPHIRE SUBSTRATE;

COALESCENCE; CRYSTALLINE MATERIALS; GALLIUM ALLOYS; GALLIUM NITRIDE; LEAKAGE CURRENTS; LIGHT; LIGHT EMISSION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NEAR FIELD SCANNING OPTICAL MICROSCOPY; NONLINEAR OPTICS; OPTICAL MATERIALS; OPTICAL PROPERTIES; ORGANIC CHEMICALS; ORGANIC LIGHT EMITTING DIODES (OLED); PHYSICAL OPTICS; RAMAN SPECTROSCOPY; SAPPHIRE; SEMICONDUCTOR DIODES; STRESS CONCENTRATION;

LIGHT EMITTING DIODES;

EID: 77952573542     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.200880409     Document Type: Conference Paper

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