The silicon oxynitride layer deposited at low temperature for high-brightness GaN-based light-emitting diodes

Solid-State Electronics

Volumn 50, Issue 3, 2006, Pages 508-510

  Da, Xiaoli ^a   Guo, Xia ^a   Dong, Limin ^a   Song, Yingping ^a   Ai, Weiwei ^a   Shen, Guangdi ^a  

^a BEIJING UNIVERSITY OF TECHNOLOGY   (China)

Author keywords

GaN LEDs; Passivation; PECVD; Silicon oxynitride

Indexed keywords

DEPOSITION; ELECTRIC PROPERTIES; GALLIUM NITRIDE; LEAKAGE CURRENTS; LIGHT EMISSION; LIGHT EMITTING DIODES; PASSIVATION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;

GAN-LEDS; PECVD; SILICON OXYNITRIDE; SILICON OXYNITRIDE PASSIVATION LAYER;

SILICON NITRIDE;

EID: 33646524055     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2006.02.005     Document Type: Article

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