Defect-reduced green GaInN/GaN light-emitting diode on nanopatterned sapphire

Applied Physics Letters

Volumn 98, Issue 15, 2011, Pages

  Li, Yufeng ^a   You, Shi ^a   Zhu, Mingwei ^a   Zhao, Liang ^a   Hou, Wenting ^a   Detchprohm, T ^a   Taniguchi, Y ^b   Tamura, N ^b   Tanaka, S ^b   Wetzel, C ^a  

^a Research Rensselaer Polytechnic Institute   (United States)

^b SCIVAX Corporation   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

C-PLANE SAPPHIRE SUBSTRATES; CHIP SURFACES; EMISSION PATTERN; INTERNAL QUANTUM EFFICIENCY; LIGHT EXTRACTION; LIGHT OUTPUT; LIGHT OUTPUT POWER; METAL-ORGANIC VAPOR PHASE EPITAXY; NANOPATTERNED SUBSTRATES; QUANTITATIVE ANALYSIS; QUANTUM WELL; SPECTRAL INTERFERENCE; THREADING DISLOCATION DENSITIES;

EXTRACTION; LIGHT EMISSION; METALLORGANIC VAPOR PHASE EPITAXY; ORGANIC LIGHT EMITTING DIODES (OLED); QUANTUM EFFICIENCY; SAPPHIRE; SEMICONDUCTOR QUANTUM WELLS; TRANSMISSION ELECTRON MICROSCOPY;

LIGHT EMITTING DIODES;

EID: 79954601399     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3579255     Document Type: Article

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