Nitride-based LEDs with a hybrid Al mirror +TiO 2/ SiO 2 DBR backside reflector

Journal of Lightwave Technology

Volumn 26, Issue 17, 2008, Pages 3131-3136

  Chang, S J ^a   Shen, C F ^a   Hsieh, M H ^b   Kuo, C T ^b   Ko, T K ^b   Chen, W S ^a   Shei, S C ^c  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b EPISTAR CORPORATION   (Taiwan)

^c NATIONAL UNIVERSITY OF TAINAN   (Taiwan)

Author keywords

Al; Distributed Bragg reflector (DBR); GaN; Light emitting diode (LED); Reflector

Indexed keywords

AL; DISTRIBUTED BRAGG REFLECTOR (DBR); GAN; LIGHT-EMITTING DIODE (LED); REFLECTOR;

ALUMINUM; BRAGG CELLS; BRAGG REFLECTORS; CURRENT DENSITY; DIODES; DISTRIBUTED BRAGG REFLECTORS; GALLIUM ALLOYS; GALLIUM NITRIDE; LIGHT EMISSION; LIGHT EMITTING DIODES; MIRRORS; NITRIDES; SEMICONDUCTING GALLIUM; SILICON COMPOUNDS;

REFLECTION;

EID: 60149101951     PISSN: 07338724     EISSN: None     Source Type: Journal    
DOI: 10.1109/JLT.2008.923927     Document Type: Article

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