Enhanced output power of GaN-based LEDs with nano-patterned sapphire substrates

IEEE Photonics Technology Letters

Volumn 20, Issue 13, 2008, Pages 1193-1195

  Chen, J J ^a   Su, Y K ^a   Lin, C L ^b   Chen, S M ^b   Li, W L ^a   Kao, C C ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b KUN SHAN UNIVERSITY   (Taiwan)

Author keywords

GaN; Light emitting diode (LED); Nano patterned sapphire substrate (NPSS); Nanosphere lithography

Indexed keywords

A THERMALS; CRYSTALLINE QUALITIES; EMITTING WAVELENGTHS; GAN; GAN-BASED LEDS; GAN-BASED LIGHT-EMITTING DIODES; HIGH INJECTIONS; INJECTION CURRENTS; LIGHT-EMITTING DIODE (LED); NANO-PATTERNED SAPPHIRE SUBSTRATE (NPSS); NANOSPHERE LITHOGRAPHY; OUTPUT POWER;

CORUNDUM; CURRENT DENSITY; DIODES; EPITAXIAL FILMS; GALLIUM NITRIDE; LIGHT EMISSION; LIGHT EMITTING DIODES; NANOSPHERES; ORGANIC LIGHT EMITTING DIODES (OLED); SAPPHIRE; SEMICONDUCTING GALLIUM; SUBSTRATES;

GALLIUM ALLOYS;

EID: 56849117784     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2008.924900     Document Type: Article

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