The Silicon Nitride Film Formed by ECR-CVD for GaN-Based LED Passivation

Physica Status Solidi (A) Applied Research

Volumn 188, Issue 1, 2001, Pages 175-178

  Chang, K M ^a   Lang, C C ^a   Cheng, C C ^a  

^a Science Based Industrial Park   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0141930653     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-396X(200111)188:1<175::AID-PSSA175>3.0.CO;2-H     Document Type: Article

References (8)

1. S. NAKAMURA and G. FASOL, The Blue Laser Diode: GaN Based Light Emitters and Lasers, Springer-Verlag, Berlin 1997.
2. S. NAKAMURA, Diam. Relat. Mater. 5, 496 (1996).
3. M. VOGT and R. HAUPTMANN, Surf. Coat. Technol. 74, 676 (1995).
4. J. W. OSENBACH and W.R. KNOLLE, J. Electrochem. Soc. 139, 3346 (1992).
5. K. M. CHANG, J. Y. TSAI, C. H. LI, T. H. YEH, S. W. WANG, and J. Y. YANG, J. Appl. Phys. 79, 8503 (1996).
6. A. WIERSCH, C. HEEDT, S. SCHNEIDERS, R. TILDERS, F. BUCHALI, W. KUEBART, W. PROST, and F. J. TEGUDE, J. Non-Cryst. Solids 187, 334 (1995).
7. S. MATSUO and I. KIACHI, in: Proc. Symp. Very-Large-Scale Integration, Science and Technology, The Electrochemical Society, Pennington, NJ, 1982.
8. H. DUN, P. PAN, F. R. WHILE, and R. W. DOUSE, J. Electrochem. Soc. 128, 1555 (1981).