![]() |
Volumn 87, Issue 5, 2005, Pages
|
Vertically oriented GaN-based air-gap distributed Bragg reflector structure fabricated using band-gap-selective photoelectrochemical etching
|
Author keywords
[No Author keywords available]
|
Indexed keywords
BRAGG REFLECTORS;
MICROREFLECTANCE MEASUREMENTS;
PHOTOELECTROCHEMICAL (PEC) ETCHING;
SACRIFICIAL LAYERS;
DRY ETCHING;
ENERGY GAP;
EPITAXIAL GROWTH;
ETCHING;
FABRICATION;
GALLIUM NITRIDE;
PHOTOELECTROCHEMICAL CELLS;
REFLECTION;
SUPERLATTICES;
BRAGG CELLS;
|
EID: 33645506884
PISSN: 00036951
EISSN: None
Source Type: Journal
DOI: 10.1063/1.2008380 Document Type: Article |
Times cited : (66)
|
References (17)
|