Vertically oriented GaN-based air-gap distributed Bragg reflector structure fabricated using band-gap-selective photoelectrochemical etching

Applied Physics Letters

Volumn 87, Issue 5, 2005, Pages

  Sharma, R ^a   Haberer, E D ^a   Meier, C ^a   Hu, E L ^a   Nakamura, S ^a  

^a Santa Barbara   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BRAGG REFLECTORS; MICROREFLECTANCE MEASUREMENTS; PHOTOELECTROCHEMICAL (PEC) ETCHING; SACRIFICIAL LAYERS;

DRY ETCHING; ENERGY GAP; EPITAXIAL GROWTH; ETCHING; FABRICATION; GALLIUM NITRIDE; PHOTOELECTROCHEMICAL CELLS; REFLECTION; SUPERLATTICES;

BRAGG CELLS;

EID: 33645506884     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2008380     Document Type: Article

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