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Volumn 153, Issue 12, 2006, Pages

Fabrication and characterization of GaN-based LEDs grown on chemical wet-etched patterned sapphire substrates

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLOGRAPHY; ETCHING; GALLIUM NITRIDE; GROWTH (MATERIALS); LIGHT SCATTERING; QUANTUM EFFICIENCY; RAY TRACING; SAPPHIRE;

EID: 33750806450     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2359701     Document Type: Article
Times cited : (48)

References (25)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.