SCOPUS 정보 검색 플랫폼

Volumn 114, Issue 7, 2013, Pages

Experimental evidence of the quantum point contact theory in the conduction mechanism of bipolar HfO2-based resistive random access memories

(8) Procel L M a,b Trojman, L b Moreno, J b Crupi, F a Maccaronio, V a Degraeve, R c Goux, L c Simoen, E c

a UNIVERSITY OF CALABRIA (Italy)

b UNIVERSIDAD SAN FRANCISCO DE QUITO (Ecuador)

c IMEC (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

CONDUCTION MECHANISM; ELECTRON TRANSPORT; EXPERIMENTAL EVIDENCE; IV CHARACTERISTICS; QUANTUM POINT CONTACT; RESISTIVE RANDOM ACCESS MEMORY; RESISTIVE RANDOM ACCESS MEMORY (RERAM); STATISTICAL STUDY;

HAFNIUM OXIDES; QUANTUM CHEMISTRY; TITANIUM NITRIDE;

POINT CONTACTS;

EID: 84883280760 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.4818499 Document Type: Article

Times cited : (51)

References (37)

1
- 0001331485
- 10.1063/1.126902
- A. Beck, J. G. Bednorz, C. Gerber, C. Rossel, and D. Widmer, Appl. Phys. Lett. 77, 139 (2000). 10.1063/1.126902
- (2000) Appl. Phys. Lett. , vol.77 , pp. 139
- Beck, A.¹ Bednorz, J.G.² Gerber, C.³ Rossel, C.⁴ Widmer, D.⁵

2
- 0035883782
- 10.1063/1.1389522
- C. Rossel, G. I. Meijer, D. Brémaud, and D. Widmer, J. Appl. Phys. 90, 2892 (2001). 10.1063/1.1389522
- (2001) J. Appl. Phys. , vol.90 , pp. 2892
- Rossel, C.¹ Meijer, G.I.² Brémaud, D.³ Widmer, D.⁴

3
- 0035806023
- 10.1063/1.1377617
- Y. Watanabe, J. G. Bednorz, A. Bietsch, C. Gerber, D. Widmer, A. Beck, and S. J. Wind, Appl. Phys. Lett. 78, 3738 (2001). 10.1063/1.1377617
- (2001) Appl. Phys. Lett. , vol.78 , pp. 3738
- Watanabe, Y.¹ Bednorz, J.G.² Bietsch, A.³ Gerber, C.⁴ Widmer, D.⁵ Beck, A.⁶ Wind, S.J.⁷

4
- 19044363374
- 10.1109/LED.2005.846592
- H. Sim, D. Choi, D. Lee, S. Seo, M.-J. Lee, I.-K. Yoo, and H. Hwang, IEEE Electron Device Lett. 26, 292 (2005). 10.1109/LED.2005.846592
- (2005) IEEE Electron Device Lett. , vol.26 , pp. 292
- Sim, H.¹ Choi, D.² Lee, D.³ Seo, S.⁴ Lee, M.-J.⁵ Yoo, I.-K.⁶ Hwang, H.⁷

5
- 27144444787
- 10.1109/LED.2005.854397
- D. Lee, H. Choi, H. Sim, D. Choi, H. Hwang, M.-J. Lee, S.-A. Seo, and I. K. Yoo, IEEE Electron Device Lett. 26, 719 (2005). 10.1109/LED.2005.854397
- (2005) IEEE Electron Device Lett. , vol.26 , pp. 719
- Lee, D.¹ Choi, H.² Sim, H.³ Choi, D.⁴ Hwang, H.⁵ Lee, M.-J.⁶ Seo, S.-A.⁷ Yoo, I.K.⁸

6
- 19944401565
- 10.1016/j.mee.2005.04.012
- H. Sim, D. Choi, D. Lee, M. Hasan, C. B. Samantaray, and H. Hwang, Microelectron. Eng. 80, 260 (2005). 10.1016/j.mee.2005.04.012
- (2005) Microelectron. Eng. , vol.80 , pp. 260
- Sim, H.¹ Choi, D.² Lee, D.³ Hasan, M.⁴ Samantaray, C.B.⁵ Hwang, H.⁶

7
- 23944447615
- 10.1063/1.2001146
- B. J. Choi, D. S. Jeong, S. K. Kim, C. Rohde, S. Choi, J. H. Oh, H. J. Kim, C. S. Hwang, K. Szot, R. Waser, B. Reichenberg, and S. Tiedke, J. Appl. Phys. 98, 033715 (2005). 10.1063/1.2001146
- (2005) J. Appl. Phys. , vol.98 , pp. 033715
- Choi, B.J.¹ Jeong, D.S.² Kim, S.K.³ Rohde, C.⁴ Choi, S.⁵ Oh, J.H.⁶ Kim, H.J.⁷ Hwang, C.S.⁸ Szot, K.⁹ Waser, R.¹⁰ Reichenberg, B.¹¹ Tiedke, S.¹²

8
- 31544471853
- 10.1063/1.2162860
- R. Oligschlaeger, R. Waser, R. Meyer, S. Karthäuser, and R. Dittmann, Appl. Phys. Lett. 88, 042901 (2006). 10.1063/1.2162860
- (2006) Appl. Phys. Lett. , vol.88 , pp. 042901
- Oligschlaeger, R.¹ Waser, R.² Meyer, R.³ Karthäuser, S.⁴ Dittmann, R.⁵

9
- 51349122087
- in
- R. Waser, in IEEE Int. Symp. Applications of Ferroelectrics, Nara, Japan, 27-31 May 2007 (2007), p. 43.
- (2007) IEEE Int. Symp. Applications of Ferroelectrics, Nara, Japan, 27-31 May 2007 , pp. 43
- Waser, R.¹

10
- 67650102619
- 10.1002/adma.200900375
- R. Waser, R. Dittman, G. Staikov, and K. Szot, Adv. Mater. 21, 2632 (2009). 10.1002/adma.200900375
- (2009) Adv. Mater. , vol.21 , pp. 2632
- Waser, R.¹ Dittman, R.² Staikov, G.³ Szot, K.⁴

11
- 84865226443
- 10.1063/1.4745048
- S. Nigo, M. Kubota, Y. Harada, T. Hirayama, and S. Kato, J. Appl. Phys. 112, 033711 (2012). 10.1063/1.4745048
- (2012) J. Appl. Phys. , vol.112 , pp. 033711
- Nigo, S.¹ Kubota, M.² Harada, Y.³ Hirayama, T.⁴ Kato, S.⁵

12
- 82555165217
- 10.1063/1.3662922
- Q. Lv, S. Wu, J. Lu, M. Yang, P. Hu, and S. Li, J. Appl. Phys. 110, 104511 (2011). 10.1063/1.3662922
- (2011) J. Appl. Phys. , vol.110 , pp. 104511
- Lv, Q.¹ Wu, S.² Lu, J.³ Yang, M.⁴ Hu, P.⁵ Li, S.⁶

13
- 84855337372
- 10.1063/1.3672448
- A. Gyanathan and Y. Yeo, J. Appl. Phys. 110, 124517 (2011). 10.1063/1.3672448
- (2011) J. Appl. Phys. , vol.110 , pp. 124517
- Gyanathan, A.¹ Yeo, Y.²

14
- 80054980235
- 10.1063/1.3644973
- V. Kannan and J. K. Rhee, J. Appl. Phys. 110, 074505 (2011). 10.1063/1.3644973
- (2011) J. Appl. Phys. , vol.110 , pp. 074505
- Kannan, V.¹ Rhee, J.K.²

15
- 84859214431
- in
- B. Govoreanu, G. S. Kar, Y. Chen, V. Paraschiv, S. Kubicek, A. Fantini, I. P. Radu, L. Goux, S. Clima, R. Degraeve, N. Jossart, O. Richard, T. Vandeweyer, K. Seo, P. Hendrickx, G. Pourtois, H. Bender, L. Altimime, D. J. Wouters, J. A. Kittl, and M. Jurczak, in IEEE Int. Electron Devices Meet., Washington D.C., 5-7 December 2011 (2011), p. 729.
- (2011) IEEE Int. Electron Devices Meet., Washington D.C., 5-7 December 2011 , pp. 729
- Govoreanu, B.¹ Kar, G.S.² Chen, Y.³ Paraschiv, V.⁴ Kubicek, S.⁵ Fantini, A.⁶ Radu, I.P.⁷ Goux, L.⁸ Clima, S.⁹ Degraeve, R.¹⁰ Jossart, N.¹¹ Richard, O.¹² Vandeweyer, T.¹³ Seo, K.¹⁴ Hendrickx, P.¹⁵ Pourtois, G.¹⁶ Bender, H.¹⁷ Altimime, L.¹⁸ Wouters, D.J.¹⁹ Kittl, J.A.²⁰ Jurczak, M.²¹ more..

16
- 10044237971
- 10.1063/1.1812580
- A. Sawa, T. Fujii, M. Kawasaki, and Y. Tokura, Appl. Phys. Lett. 85, 4073 (2004). 10.1063/1.1812580
- (2004) Appl. Phys. Lett. , vol.85 , pp. 4073
- Sawa, A.¹ Fujii, T.² Kawasaki, M.³ Tokura, Y.⁴

17
- 19744383252
- 10.1063/1.1845598
- T. Fujii, M. Kawasaki, A. Sawa, H. Akoh, Y. Kawazoe, and Y. Tokura, Appl. Phys. Lett. 86, 012107 (2005). 10.1063/1.1845598
- (2005) Appl. Phys. Lett. , vol.86 , pp. 012107
- Fujii, T.¹ Kawasaki, M.² Sawa, A.³ Akoh, H.⁴ Kawazoe, Y.⁵ Tokura, Y.⁶

18
- 31144461698
- 10.1063/1.2164917
- M. J. Rosenberg, I. H. Inoue, and M. J. Sanchez, Appl. Phys. Lett. 88, 033510 (2006). 10.1063/1.2164917
- (2006) Appl. Phys. Lett. , vol.88 , pp. 033510
- Rosenberg, M.J.¹ Inoue, I.H.² Sanchez, M.J.³

19
- 3242892591
- 10.1063/1.1768305
- S. Tsui, A. Baikalov, J. Cmaidalka, Y. Y. Sun, Y. Q. Wang, Y. Y. Xue, C. W. Chu, L. Chen, and A. J. Jacobson, Appl. Phys. Lett. 85, 317 (2004). 10.1063/1.1768305
- (2004) Appl. Phys. Lett. , vol.85 , pp. 317
- Tsui, S.¹ Baikalov, A.² Cmaidalka, J.³ Sun, Y.Y.⁴ Wang, Y.Q.⁵ Xue, Y.Y.⁶ Chu, C.W.⁷ Chen, L.⁸ Jacobson, A.J.⁹

20
- 0042378349
- 10.1063/1.1590741
- A. Baikalov, Y. Q. Wang, B. Shen, B. Lorenz, S. Tsui, Y. Sun, Y. Y. Xue, and C. W. Chu, Appl. Phys. Lett. 83, 957 (2003). 10.1063/1.1590741
- (2003) Appl. Phys. Lett. , vol.83 , pp. 957
- Baikalov, A.¹ Wang, Y.Q.² Shen, B.³ Lorenz, B.⁴ Tsui, S.⁵ Sun, Y.⁶ Xue, Y.Y.⁷ Chu, C.W.⁸

21
- 84864151731
- 10.1063/1.4730776
- M. Sasaki, J. Appl. Phys. 112, 014501 (2012). 10.1063/1.4730776
- (2012) J. Appl. Phys. , vol.112 , pp. 014501
- Sasaki, M.¹

22
- 33646885556
- 10.1063/1.2204649
- D. C. Kim, S. Seo, S. E. Ahn, D.-S. Suh, M. J. Lee, B.-H. Park, I. K. Yoo, I. G. Baek, H.-J. Kim, E. K. Yim, J. E. Lee, S. O. Park, H. S. Kim, U.-I. Chung, J. T. Moon, and B. I. Ryu, Appl. Phys. Lett. 88, 202102 (2006). 10.1063/1.2204649
- (2006) Appl. Phys. Lett. , vol.88 , pp. 202102
- Kim, D.C.¹ Seo, S.² Ahn, S.E.³ Suh, D.-S.⁴ Lee, M.J.⁵ Park, B.-H.⁶ Yoo, I.K.⁷ Baek, I.G.⁸ Kim, H.-J.⁹ Yim, E.K.¹⁰ Lee, J.E.¹¹ Park, S.O.¹² Kim, H.S.¹³ Chung, U.-I.¹⁴ Moon, J.T.¹⁵ Ryu, B.I.¹⁶

23
- 84855306489
- 10.1063/1.3671565
- G. Bersuker, D. C. Gilmer, D. Veksler, P. Kirsch, L. Vandelli, A. Padovani, L. Larcher, K. McKenna, A. Shluger, V. Iglesias, M. Porti, and M. Nafría, J. Appl. Phys. 110, 124518 (2011). 10.1063/1.3671565
- (2011) J. Appl. Phys. , vol.110 , pp. 124518
- Bersuker, G.¹ Gilmer, D.C.² Veksler, D.³ Kirsch, P.⁴ Vandelli, L.⁵ Padovani, A.⁶ Larcher, L.⁷ McKenna, K.⁸ Shluger, A.⁹ Iglesias, V.¹⁰ Porti, M.¹¹ Nafría, M.¹²

24
- 58149236521
- 10.1063/1.3056659
- X. Li, C. H. Tung, and K. L. Pey, Appl. Phys. Lett. 93, 262902 (2008). 10.1063/1.3056659
- (2008) Appl. Phys. Lett. , vol.93 , pp. 262902
- Li, X.¹ Tung, C.H.² Pey, K.L.³

25
- 84857157880
- in
- R. Degraeve, Ph. Roussel, L. Goux, D. Wouters, J. Kittl, L. Altimime, M. Jurczak, and G. Groeseneken, in IEEE Int. Electron Devices Meet., San Francisco, 6-8 December 2010 (2010), p. 632.
- (2010) IEEE Int. Electron Devices Meet., San Francisco, 6-8 December 2010 , pp. 632
- Degraeve, R.¹ Roussel, Ph.² Goux, L.³ Wouters, D.⁴ Kittl, J.⁵ Altimime, L.⁶ Jurczak, M.⁷ Groeseneken, G.⁸

26
- 84883268228
- in
- R. Degraeve, L. Goux, S. Clima, B. Govoreanu, Y. Chen, G. Kar, P. Rousse, G. Pourtois, D. Wouters, L. Altimime, M. Jurczak, G. Groeseneken, and J. Kittl, in IEEE Int. Symp. VLSI Technology, Systems and Applications (VLSI-TSA), Hsinchu, Taiwan, 23-25 April 2012, pp. 1-2.
- IEEE Int. Symp. VLSI Technology, Systems and Applications (VLSI-TSA), Hsinchu, Taiwan, 23-25 April 2012 , pp. 1-2
- Degraeve, R.¹ Goux, L.² Clima, S.³ Govoreanu, B.⁴ Chen, Y.⁵ Kar, G.⁶ Rousse, P.⁷ Pourtois, G.⁸ Wouters, D.⁹ Altimime, L.¹⁰ Jurczak, M.¹¹ Groeseneken, G.¹² Kittl, J.¹³

27
- 84949751467
- in
- E. Miranda and J. Suñé, in IEEE Int. Reliability Physics Symp. Proc., 30 April-03 May 2001 (2001), p. 367.
- (2001) IEEE Int. Reliability Physics Symp. Proc., 30 April-03 May 2001 , pp. 367
- Miranda, E.¹ Suñé, J.²

28
- 77953023010
- 10.1109/LED.2010.2046310
- E. Miranda, C. Walczyk, C. Wenger, and T. Schroeder, IEEE Electron Device Lett. 31, 609 (2010). 10.1109/LED.2010.2046310
- (2010) IEEE Electron Device Lett. , vol.31 , pp. 609
- Miranda, E.¹ Walczyk, C.² Wenger, C.³ Schroeder, T.⁴

29
- 19944431600
- 10.1063/1.1827343
- A. Avellán, E. Miranda, D. Schroeder, and W. Krautschneider, J. Appl. Phys. 97, 014104 (2005). 10.1063/1.1827343
- (2005) J. Appl. Phys. , vol.97 , pp. 014104
- Avellán, A.¹ Miranda, E.² Schroeder, D.³ Krautschneider, W.⁴

30
- 84875425926
- 10.1016/j.mee.2013.02.076
- V. Maccaronio, F. Crupi, L. M. Procel, L. Goux, E. Simoen, and L. Trojman, Microelectron. Eng. 107, 1 (2013). 10.1016/j.mee.2013.02.076
- (2013) Microelectron. Eng. , vol.107 , pp. 1
- Maccaronio, V.¹ Crupi, F.² Procel, L.M.³ Goux, L.⁴ Simoen, E.⁵ Trojman, L.⁶

31
- 84877771146
- 10.1063/1.4802265
- S. Long, X. Lian, C. Cagli, X. Cartoixà, R. Rurali, E. Miranda, D. Jiménez, L. Perniola, M. Liu, and J. Suñé, Appl. Phys. Lett. 102, 183505 (2013). 10.1063/1.4802265
- (2013) Appl. Phys. Lett. , vol.102 , pp. 183505
- Long, S.¹ Lian, X.² Cagli, C.³ Cartoixà, X.⁴ Rurali, R.⁵ Miranda, E.⁶ Jiménez, D.⁷ Perniola, L.⁸ Liu, M.⁹ Suñé, J.¹⁰

32
- 34247529519
- 10.1088/1742-6596/61/1/266
- Y. Zheng, C. Troadec, A. Wee, K. Pey, S. O'Shea, and N. Chandrasekhar, J. Phys.: Conf. Ser. 61, 1347 (2007). 10.1088/1742-6596/61/1/266
- (2007) J. Phys.: Conf. Ser. , vol.61 , pp. 1347
- Zheng, Y.¹ Troadec, C.² Wee, A.³ Pey, K.⁴ O'Shea, S.⁵ Chandrasekhar, N.⁶

33
- 84879847355
- 10.1063/1.4812811
- X. L. Jiang, Y. G. Zhao, Y. S. Chen, D. Li, Y. X. Luo, D. Y. Zhao, Z. Sun, J. R. Sun, and H. W. Zhao, Appl. Phys. Lett. 102, 253507 (2013). 10.1063/1.4812811
- (2013) Appl. Phys. Lett. , vol.102 , pp. 253507
- Jiang, X.L.¹ Zhao, Y.G.² Chen, Y.S.³ Li, D.⁴ Luo, Y.X.⁵ Zhao, D.Y.⁶ Sun, Z.⁷ Sun, J.R.⁸ Zhao, H.W.⁹

34
- 79951501925
- 10.1063/1.3549689
- C. H. Cheng, A. Chin, and F. S. Yeh, Appl. Phys. Lett. 98, 052905 (2011). 10.1063/1.3549689
- (2011) Appl. Phys. Lett. , vol.98 , pp. 052905
- Cheng, C.H.¹ Chin, A.² Yeh, F.S.³

35
- 68249128656
- in
- Z. Wei, Y. Kanzawa, K. Arita, Y. Katoh, K. Kawai, S. Muraoka, S. Mitani, S. Fujii, K. Katayama, M. Iijima, T. Mikawa, T. Ninomiya, R. Miyanaga, Y. Kawashima, K. Tsuji, A. Himeno, T. Okada, R. Azuma, K. Shimakawa, H. Sugaya, T. Takagi, R. Yasuhara, K. Horiba, H. Kumigashira, and M. Oshima, in IEEE Int. Electron Devices Meet., San Francisco, 15-17 December 2008 (2008), pp. 1-4.
- (2008) IEEE Int. Electron Devices Meet., San Francisco, 15-17 December 2008 , pp. 1-4
- Wei, Z.¹ Kanzawa, Y.² Arita, K.³ Katoh, Y.⁴ Kawai, K.⁵ Muraoka, S.⁶ Mitani, S.⁷ Fujii, S.⁸ Katayama, K.⁹ Iijima, M.¹⁰ Mikawa, T.¹¹ Ninomiya, T.¹² Miyanaga, R.¹³ Kawashima, Y.¹⁴ Tsuji, K.¹⁵ Himeno, A.¹⁶ Okada, T.¹⁷ Azuma, R.¹⁸ Shimakawa, K.¹⁹ Sugaya, H.²⁰ more..

36
- 80053195087
- 10.1109/TED.2011.2162518
- H.-D. Kim, H.-M. An, E. B. Lee, and T. G. Kim, IEEE Trans. Electron Devices 58, 3566 (2011). 10.1109/TED.2011.2162518
- (2011) IEEE Trans. Electron Devices , vol.58 , pp. 3566
- Kim, H.-D.¹ An, H.-M.² Lee, E.B.³ Kim, T.G.⁴

37
- 39349110003
- 10.1063/1.2837102
- K. Jung, J. Choi, Y. Kim, H. Im, S. Seo, R. Jung, D. C. Kim, J.-S. Kim, B. H. Park, and J. P. Hong, J. Appl. Phys. 103, 034504 (2008). 10.1063/1.2837102
- (2008) J. Appl. Phys. , vol.103 , pp. 034504
- Jung, K.¹ Choi, J.² Kim, Y.³ Im, H.⁴ Seo, S.⁵ Jung, R.⁶ Kim, D.C.⁷ Kim, J.-S.⁸ Park, B.H.⁹ Hong, J.P.¹⁰

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.