Stable bipolar resistive switching characteristics and resistive switching mechanisms observed in aluminum nitride-based ReRAM devices

IEEE Transactions on Electron Devices

Volumn 58, Issue 10, 2011, Pages 3566-3573

  Kim, Hee Dong ^a   An, Ho Myoung ^a   Lee, Eui Bok ^a   Kim, Tae Geun ^a  

^a Korea University   (South Korea)

Author keywords

aluminum nitride (AlN); Atomic force microscopy (AFM); resistive switching (RS); space charge limited conduction (SCLC)

Indexed keywords

ALN; ATOMIC FORCE MICROSCOPY (AFM); FAST SWITCHING; HIGH-SPEED; NONVOLATILE MEMORY DEVICES; PULSE OPERATION; RESISTIVE RANDOM ACCESS MEMORY; RESISTIVE SWITCHING; RESISTIVE SWITCHING MECHANISMS; RETENTION TIME; SET OPERATION; SPACE-CHARGE-LIMITED; SWITCHING CHARACTERISTICS; ULTRA-FAST;

ALUMINUM; ATOMIC FORCE MICROSCOPY; NITRIDES; NONVOLATILE STORAGE; RANDOM ACCESS STORAGE; SWITCHING; SWITCHING SYSTEMS; VANADIUM;

ALUMINUM NITRIDE;

EID: 80053195087     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2011.2162518     Document Type: Article

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