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Volumn 102, Issue 25, 2013, Pages

Characteristics of different types of filaments in resistive switching memories investigated by complex impedance spectroscopy

(9) Jiang, X L a Zhao, Y G a Chen, Y S b Li, D b Luo, Y X a Zhao, D Y a Sun, Z a Sun, J R b Zhao, H W b

a TSINGHUA UNIVERSITY (China)

b INSTITUTE OF GEOLOGY AND GEOPHYSICS (China)

Author keywords

[No Author keywords available]

Indexed keywords

COMPLEX IMPEDANCE SPECTROSCOPY; COMPLEX IMPEDANCE SPECTRUM; CONDUCTING BEHAVIOR; CONDUCTING FILAMENT; HIGH-RESISTANCE STATE; RESISTIVE SWITCHING; RESISTIVE SWITCHING MEMORY; SWITCHING MECHANISM;

HAFNIUM OXIDES;

SWITCHING SYSTEMS;

EID: 84879847355 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.4812811 Document Type: Article

Times cited : (59)

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