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Volumn 110, Issue 12, 2011, Pages

Multi-level phase change memory devices with Ge 2Sb 2Te 5 layers separated by a thermal insulating Ta 2O 5 barrier layer

(2) Gyanathan, Ashvini a Yeo, Yee Chia a

a NATIONAL UNIVERSITY OF SINGAPORE (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

BARRIER LAYERS; BOTTOM ELECTRODES; ELECTRICAL CHARACTERIZATION; MELTING AND CRYSTALLIZATION; MULTI-LEVEL; NITROGEN-DOPED; PCRAM CELLS; PHASE CHANGE LAYER; PHASE CHANGE RANDOM ACCESS MEMORY; RESISTANCE SWITCHING; SWITCHING DYNAMICS; SWITCHING MECHANISM; THERMAL-INSULATING; VOLTAGE PULSE;

ELECTRIC POTENTIAL; GERMANIUM; RANDOM ACCESS STORAGE; SWITCHING; TANTALUM OXIDES; THERMAL CONDUCTIVITY; THERMAL INSULATING MATERIALS; THERMOANALYSIS;

PHASE CHANGE MEMORY;

EID: 84855337372 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3672448 Document Type: Article

Times cited : (39)

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