Conduction band caused by oxygen vacancies in aluminum oxide for resistance random access memory

Journal of Applied Physics

Volumn 112, Issue 3, 2012, Pages

  Nigo, Seisuke ^a   Kubota, Masato ^b   Harada, Yoshitomo ^a   Hirayama, Taisei ^c   Kato, Seiichi ^a   Kitazawa, Hideaki ^a   Kido, Giyuu ^a  

^a NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^b JAPAN ATOMIC ENERGY AGENCY   (Japan)

^c RIGAKU CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AL OXIDE; AL-IONS; ALUMINUM OXIDES; ELECTRONIC MECHANISMS; ELECTRONIC MEMORIES; FIRST-PRINCIPLES CALCULATION; IMPURITY BANDS; METAL/INSULATOR/SEMICONDUCTOR STRUCTURES; RESISTANCE CHANGE; RESISTANCE RANDOM ACCESS MEMORY; SIMULATED RESULTS; THERMALLY STIMULATED CURRENT;

ALUMINUM; CALCULATIONS; ELECTRONIC STRUCTURE; OXYGEN VACANCIES;

CONDUCTION BANDS;

EID: 84865226443     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4745048     Document Type: Article

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