Analytic modeling of leakage current through multiple breakdown paths in SiO2 films

IEEE International Reliability Physics Symposium Proceedings

Volumn 2001-January, Issue , 2001, Pages 367-379

  Miranda, E ^a   Sune J ^b  

^a UNIVERSIDAD DE BUENOS AIRES   (Argentina)

^b UNIVERSITAT AUTÒNOMA DE BARCELONA   (Spain)

Author keywords

Current voltage characteristics; Dielectric breakdown; Dielectrics and electrical insulation; Electric breakdown; Electrodes; Electrons; Leakage current; MOS devices; Physics; Quantization

Indexed keywords

CIRCUIT SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; DIELECTRIC MATERIALS; ELECTRIC BREAKDOWN; ELECTRIC INSULATION; ELECTRODES; ELECTRONS; MOS DEVICES; PHYSICS; POINT CONTACTS; QUANTUM CHEMISTRY;

CHARGE TRANSPORT PROCESS; CONCEPTUAL FRAMEWORKS; GATE-LEAKAGE CURRENT; POST-BREAKDOWN CURRENT; QUANTIZATION; QUANTUM POINT CONTACT; STRESS-INDUCED LEAKAGE CURRENT; THEORETICAL FRAMEWORK;

LEAKAGE CURRENTS;

EID: 84949751467     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RELPHY.2001.922929     Document Type: Conference Paper

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