Polysilicon gate etching in high density plasmas. V. Comparison between quantitative chemical analysis of photoresist and oxide masked polysilicon gates etched in HBr/Cl2/O2 plasmas

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 15, Issue 1, 1997, Pages 88-97

  Bell, F H ^a   Joubert, O ^a  

^a ORANGE LABS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0003156403     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.589259     Document Type: Review

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