Eliminating heavily implanted resist in sub-0.25-μm devices

MICRO

Volumn 16, Issue 7, 1998, Pages 71-84

  Kirkpatrick, Andy ^a,c,d,e   Fernandes, Neil ^a,f,g   Uk, Tinal ^a   Patrizi, Gary ^b,h,i  

^a GaSonics International ^*  (United States)

^b NXP SEMICONDUCTORS   (Netherlands)

^c Gasonics IPC   (United States)

^d UNITED STATES NAVAL ACADEMY   (United States)

^e UNIVERSITY OF CALIFORNIA   (United States)

^f UNIVERSITY OF TEXAS AT AUSTIN   (United States)

^g ELECTROCHEMICAL SOCIETY

^h SANDIA NATIONAL LABORATORIES   (United States)

ⁱ Veterinary Dentistry and Oral Surgery   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 11744299210     PISSN: 10810595     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (6)

1. Hirose K, Shimada H, Shimomura S, et al., "Ion-Implanted Photoresist and Damage-Free Stripping," Journal of the Electrochemical Society, 141:192, January 1994.
2. McOmber J, and Nair RS, Nuclear Instruments and Methods in Physics, B55:281, 1991.
3. McOmber J, Ostrowski K, Meloni M, et al., Nuclear Instruments and Methods in Physics, B74:266, 1993.
4. McOmber J, Ostrowski K, Whitney L, et al., "An Integrated Resist/Implant/Ash Study of Different Photoresists," in Proceedings from the 10th Ion Implantation Technology Conference, Elsevier Publishers (The Netherlands), June 1994.
5. Rubin L, and Morris W, "High-Energy Ion Implanters and Applications Take Off," Semiconductor International, 20(4):77, 1997.
6. The National Technology Roadmap for Semiconductors, San Jose, SIA, 1997.