Increase device yield with FEOL dry-clean processes

Solid State Technology

Volumn 46, Issue 12, 2003, Pages 38-40

  Graff, Wes ^a   Chiu, Eddie ^a   Krishna, Vinay ^b   Merriam, Jennifer ^b   Keswick, Peter ^b  

^a NOVELLUS SYSTEMS INC   (United States)

^b CYPRESS SEMICONDUCTOR   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DUAL PLASMA TECHNOLOGY; MICROWAVE (MW) PLASMA;

AMMONIUM COMPOUNDS; CLEANING; DRY ETCHING; ELECTRIC CONTACTS; ELECTRIC RESISTANCE; FLUORINE; HIGH TEMPERATURE EFFECTS; PLASMA DEVICES; POLYSILICON; REACTIVE ION ETCHING; WATER;

GATES (TRANSISTOR);

EID: 0346936045     PISSN: 0038111X     EISSN: None     Source Type: Trade Journal    
DOI: None     Document Type: Review

References (7)

1. P. Singer, "Plasma Ashing Moves into the Mainstream," Semiconductor International, August 1996.
2. M. Heyns, P.W. Mertens, J. Ruzyllo, M.Y.M. Lee, "Advanced Wet and Dry Cleaning Coming Together for Next Generation," Solid State Technology, pp. 37-47, March 1999.
3. J. Suehle, "Advanced MOS Device Reliability and Characterization," www.eeel.nist.gov, March 2003
4. International Technology Roadmap for Semiconductors (ITRS 1999), Semiconductor Industry Assoc., San Jose, CA.
5. W. Graff, et al., "RF and Microwave Plasma for Resist and Post-Etch Polymer Removal," Solid State Technology, pp. 37-42, December 2001.
6. E. Pavel, "Combining Microwave Downstream and RF Plasma Technology for Etch and Clean Applications," 196th Meeting of the Electrochem. Soc., Honolulu, Hawaii, October, 1999.
7. R. Gottscho, J.K. LaCara, J.V. Tietz, "In situ processing for etch," Solid State Technology, pp. 44-48, March 2003.