Characterization of photoresist poisoning induced by a post etch stripping step

Proceedings of the IEEE 2002 International Interconnect Technology Conference, IITC 2002

Volumn , Issue , 2002, Pages 30-32

  Lamy, S ^a   Louveau, O ^b   Fanget, G ^a   Fayolle, M ^a   Rochat, N ^a   Louis, D ^a   Broussous, L ^b  

^a CEA GRENOBLE   (France)

^b STMICROELECTRONICS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

INTEGRATED CIRCUIT INTERCONNECTS; LOW-K DIELECTRIC; PHOTORESISTS;

BACK END OF LINES; CHARACTERIZATION TECHNIQUES; ELECTRICAL PERFORMANCE; STRIPPING OPERATIONS; STRIPPING PROCESS;

DIELECTRIC MATERIALS;

EID: 84961711964     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IITC.2002.1014877     Document Type: Conference Paper

References (6)

1. - Wet or plasma clean ? Competing or complementary ? A dual damascene study with Si-OC-H dielectric on copper wiring. D. LOUIS et al. Proceedings of IITC 2001
2. - Lithographic effects of acid diffusion in chemically amplified resists. C.MACK, Proceedings of Interface 95, 217-229
3. - Investigation of substrate-effect in chemically amplified resists. S.Mori et al., Proceedings of SPIE 96, vol.2724, 131-138
4. - Overcoming of resist poisoning issue during SiOC dielectric integration in Cu dual damascene interconnect for 0.1 μm technology M. Fayolle et al. Proceedings MAM 2001
5. - Multiple internal reflection spectroscopy: a sensitive non-destructive probe for interfaces and nanometric layers. N. ROCHAT et al. Materials Science in Semiconductor Processing 4 (2001)
6. - Multiple internal reflection spectroscopy using two-prism coupling geometry: A convenient way for quantitative study of organic contamination on silicon wafers. N. ROCHAT et al. Applied Physics Letters, vol.77 no14, oct.2000