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Volumn 18, Issue 4 I, 2000, Pages 1173-1175

Study of the impact of the time-delay effect on the critical dimension of a tungsten silicide/polysilicon gate after reactive ion etching

Author keywords

[No Author keywords available]

Indexed keywords

FILM GROWTH; HYDROGEN INORGANIC COMPOUNDS; MATHEMATICAL MODELS; POLYSILANES; REACTIVE ION ETCHING; TUNGSTEN COMPOUNDS;

TUNGSTEN SILICIDE;

GATES (TRANSISTOR);

EID: 0034229761 PISSN: 07342101 EISSN: None Source Type: Journal
DOI: 10.1116/1.582320 Document Type: Article

Times cited : (9)

References (11)

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11
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