Advanced photoresist strip with a high pressure ICP source

Solid State Technology

Volumn 39, Issue 10, 1996, Pages 123-128

  Savas, Steve ^a,b,c,d   Dutton, David ^a,e   Wood, Bernie ^a   Guerra, Robert ^a,c,d   Hammond, Martin L ^a  

^a MATTSON THERMAL PRODUCTS GMBH   (United States)

^b CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

^c UNIVERSITY OF CALIFORNIA   (United States)

^d Mattson Technology   (Canada)

^e SAN JOSE STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

PHOTORESISTS; PLASMA SOURCES; SURFACE CLEANING;

INDUCTIVELY COUPLED PLASMA (ICP);

SEMICONDUCTOR DEVICE MANUFACTURE;

EID: 0030251528     PISSN: 0038111X     EISSN: None     Source Type: Trade Journal    
DOI: None     Document Type: Article

References (8)

1. C. Boitnott, "Downstream plasma processing; Considerations for selective etch and other processes," Solid State Technology, Vol. 37, p. 51 (October, 1994).
2. K. Nojiri, K. Tsunokuni, JVST-B, Vol. 11, p. 1819 (1993).
3. K. Tsunokuni, et. al. 19th Conference on Solid State Devices and Materials, Tokyo, p. 195 (1987).
4. ELENDIF software package provided by W. Lowell Morgan of NCAR.
5. B. Eliasson, U. Kogelshatz, Asea-Brown-Bovari Report, KOR 86-11C (1986).
6. K. Hirose, H. Shimada, S. Shimomura, M. Onodera, T. Ohmi, J. Electrochemical Society, Vol. 141, n1, p. 192 (January 1994).
7. G. Turban, M. Rapeaux, J. Electrochemical Society, Vol. 130, n11, p. 2231 (November 1983).
8. L. Pederson, J. Electrochemical Society, Vol. 129, n1. p. 205 (January 1982).