Correction: Analytical Thermal Model for Self-Heating in Advanced FinFET Devices With Implications for Design and Reliability (IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems (2013) 32:7 (1045-1058) DOI: 10.1109/TCAD.2013.2248194);Analytical thermal model for self-heating in advanced FinFET devices with implications for design and reliability

IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems

Volumn 32, Issue 7, 2013, Pages 1045-1058

  Xu, Chuan ^a,b   Kolluri, Seshadri K ^a,c   Endo, Kazhuhiko ^d   Banerjee, Kaustav ^a  

^a University of California   (United States)

^b Technology Development and Innovation Group   (United States)

^c Efficient Power Conversion Corporation   (United States)

^d NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

Analytical model; device design; electrostatic discharge (ESD); electrothermal; FinFETs; reliability; self heating; thermal modeling; Tri gate FET

Indexed keywords

ADVANCED ANALYTICS; ANALYTICAL MODELS; ELECTROSTATIC DEVICES; FINFET; HEATING; RELIABILITY; RELIABILITY ANALYSIS; SENSITIVITY ANALYSIS; THERMOGRAPHY (TEMPERATURE MEASUREMENT);

DEVICE DESIGN; ELECTROTHERMAL; FINFETS; SELF-HEATING; THERMAL MODEL; TRIGATE;

STRUCTURAL DESIGN;

EID: 84879911491     PISSN: 02780070     EISSN: 19374151     Source Type: Journal    
DOI: 10.1109/TCAD.2019.2944583     Document Type: Erratum

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