Modeling and analysis of self-heating in FinFET devices for improved circuit and EOS/ESD performance

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2007, Pages 177-180

  Kolluri, Seshadri ^a   Endo, Kazuhiko ^b   Suzuki, Eiichi ^b   Banerjee, Kaustav ^a  

^a University of California   (United States)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON DEVICES; FIELD EFFECT TRANSISTORS; FINITE ELEMENT METHOD; GATES (TRANSISTOR); HEATING; MODAL ANALYSIS; MODEL STRUCTURES; PARAMETER ESTIMATION; RELIABILITY; RELIABILITY ANALYSIS; THREE DIMENSIONAL;

CIRCUIT PERFORMANCES; DEVICE PARAMETERS; ELECTRICAL CHARACTERISTICS; ELECTRO-THERMAL SIMULATIONS; FINFET DEVICES; FINFETS; FINITE ELEMENT SIMULATIONS; MODELING AND ANALYSIS; SELF-HEATING; SELF-HEATING EFFECTS; SHORT PULSES; THERMAL MODELLING; TIME CONSTANTS; TRANSIENT MODELLING; TRANSIENT STRESSES;

SENSITIVITY ANALYSIS;

EID: 50249095149     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2007.4418895     Document Type: Conference Paper

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