Ideal rectangular cross-section Si-Fin channel double-gate MOSFETs fabricated using orientation-dependent wet etching

IEEE Electron Device Letters

Volumn 24, Issue 7, 2003, Pages 484-486

  Liu, Yongxun ^a   Ishii, Kenichi ^a   Tsutsumi, Toshiyuki ^b   Masahara, Meishoku ^a   Suzuki, Eiichi ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b MEIJI UNIVERSITY   (Japan)

Author keywords

(110) oriented SOI; Double gate MOSFET; FinFET; FXMOSFET; Orientation dependent etching; Short channel effects; XMOS

Indexed keywords

GATES (TRANSISTOR); SILICON ON INSULATOR TECHNOLOGY; SILICON WAFERS; TRANSCONDUCTANCE;

GATE OXIDE; SHORT CHANNEL EFFECTS; WET ETCHING;

MOSFET DEVICES;

EID: 0041886632     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2003.815004     Document Type: Letter

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