Thermal contact resistance across nanoscale silicon dioxide and silicon interface

Journal of Applied Physics

Volumn 112, Issue 6, 2012, Pages

  Chen, Jie ^a   Zhang, Gang ^b   Li, Baowen ^a,c,d  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b PEKING UNIVERSITY   (China)

^c NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^d TONGJI UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLINE SILICONS; INTERFACIAL COUPLINGS; INTERFACIAL STRUCTURES; INTERFACIAL THERMAL RESISTANCE; KAPITZA RESISTANCE; MOLECULAR DYNAMICS SIMULATIONS; NANO SCALE; NUMERICAL RESULTS; PHOTONICS DEVICES; ROOM TEMPERATURE; SEMICONDUCTOR INDUSTRY; SILICON INTERFACE; SILICON NANOWIRES; TEMPERATURE DEPENDENT; THERMAL CONTACT RESISTANCE;

HETEROJUNCTIONS; MOLECULAR DYNAMICS; NANOTECHNOLOGY; NANOWIRES; SEMICONDUCTOR DEVICE MANUFACTURE; SILICA; SILICON;

SILICON OXIDES;

EID: 84867067581     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4754513     Document Type: Article

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49. The total thermal resistance is R t o t L / κ 2 R 2.71 × 10 - 7 m 2 KW - 1. The effective thermal conductivity is κ e f f L / R t o t 18.4 Wm - 1 K - 1. The contact area is assumed to be the same as the cross section area of the nanowire in this estimation.