RF extraction of self-heating effects in FinFETs

IEEE Transactions on Electron Devices

Volumn 58, Issue 10, 2011, Pages 3335-3341

  Makovejev, Sergej ^a   Olsen, Sarah ^a   Raskin, Jean Pierre ^b  

^a NEWCASTLE UNIVERSITY   (United Kingdom)

^b UNIVERSITÉ CATHOLIQUE DE LOUVAIN   (Belgium)

Author keywords

FinFET; radio frequency (RF) characterization; RF extraction method; self heating effects; silicon on insulator (SOI)

Indexed keywords

FINFET; RADIO FREQUENCIES; RF EXTRACTION METHOD; SELF-HEATING EFFECT; SILICON ON INSULATOR (SOI);

BICMOS TECHNOLOGY; ELECTROSTATIC DEVICES; FIELD EFFECT TRANSISTORS; FINS (HEAT EXCHANGE); HEATING; INTEGRATED CIRCUITS; RADIO; RADIO WAVES; THERMAL CONDUCTIVITY;

SILICON ON INSULATOR TECHNOLOGY;

EID: 80053193612     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2011.2162333     Document Type: Article

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