Localized heating effects and scaling of sub-0.18 micron CMOS devices

Technical Digest-International Electron Devices Meeting

Volumn , Issue , 2001, Pages 677-680

  Pop, Eric ^a   Banerjee, Kaustav ^a   Sverdrup, Per ^b   Dutton, Robert ^a   Goodson, Kenneth ^b  

^a INTEL CORPORATION   (United States)

^b Stanford University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRIC RESISTANCE; ELECTRON TRANSPORT PROPERTIES; ENERGY TRANSFER; PHONONS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICES; SPECIFIC HEAT OF SOLIDS; TEMPERATURE MEASUREMENT; THERMAL CONDUCTIVITY OF SOLIDS; THERMAL EFFECTS; TRANSISTORS;

BOLTZMANN TRANSPORT EQUATION; CLASSICAL HEAT DIFFUSION EQUATION; ELECTRON INJECTION; ELECTRON PHONON SCATTERING; PHONON HOT SPOTS;

CMOS INTEGRATED CIRCUITS;

EID: 0035716659     PISSN: 01631918     EISSN: None     Source Type: Journal    
DOI: 10.1109/IEDM.2001.979598     Document Type: Article

References (9)

1. Sub-continuum simulations of heat conduction in silicon-on-insulator transistors
2. Phonon scattering in silicon thin films with thickness of order 100 nm
3. Nonlocal and nonequilibrium heat conduction in the vicinity of nanoparticles
4. Scattering of conduction electrons by lattice vibrations in silicon
5. Measurement of ballistic phonon conduction near hotspots in silicon
6. Lattice vibrations in crystals with the diamond structure
7. Essential physics of carrier transport in nanoscale MOSFETs
8. Device scaling limits of Si MOSFETs and their application dependencies