Effects of H2O pretreatment on the capacitance-voltage characteristics of atomic-layer-deposited Al2O3 on Ga-face GaN metal-oxide-semiconductor capacitors

Journal of Electronic Materials

Volumn 42, Issue 1, 2013, Pages 33-39

  Liu, Xiang ^a   Yeluri, Ramya ^a   Lu, Jing ^a   Mishra, Umesh K ^a  

^a University of California   (United States)

Author keywords

Al2O3; atomic layer deposition; GaN; hysteresis; interface states; MOSCAP; traps

Indexed keywords

ALD GROWTH; ATOMIC LAYER DEPOSITED; BANDBENDING; BORDER TRAPS; C-V HYSTERESIS; CAPACITANCE VOLTAGE CHARACTERISTIC; CAPACITANCE-VOLTAGE CHARACTERISTICS; GAN; INTERFACE QUALITY; INTERFACE STATE DENSITY; METAL-OXIDE-SEMICONDUCTOR CAPACITORS; MOSCAP; PRE-TREATMENT; PRECURSOR INJECTION; TRAPS; ULTRA-VIOLET;

ALUMINUM; CAPACITORS; DIELECTRIC DEVICES; GALLIUM NITRIDE; HYSTERESIS; INTERFACE STATES;

ATOMIC LAYER DEPOSITION;

EID: 84871724599     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-012-2246-8     Document Type: Article

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