Atomic hydrogen cleaning of polar III-V semiconductor surfaces

Surface Science

Volumn 401, Issue 2, 1998, Pages 125-137

  Bell, G R ^a   Kaijaks, N S ^a   Dixon, R J ^a   McConville, C F ^a  

^a UNIVERSITY OF WARWICK   (United Kingdom)

Author keywords

Auger electron spectroscopy; Electron energy loss spectroscopy; Electron solid interactions; Etching; Gallium antimonide; Hydrogen; Indium antimonide; Indium arsenide; Low energy electron diffraction; Plasmons; Surface chemical reaction

Indexed keywords

ANNEALING; AUGER ELECTRON SPECTROSCOPY; CARRIER CONCENTRATION; CRYSTAL ORIENTATION; ELECTRON ENERGY LOSS SPECTROSCOPY; ETCHING; HYDROGEN; LOW ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SPUTTERING;

ATOMIC HYDROGEN CLEANING; ELECTRON SOLID INTERACTIONS; GALLIUM ANTIMONIDE; INDIUM ANTIMONIDE; INDIUM ARSENIDE; PLASMONS;

SURFACE CLEANING;

EID: 0032045935     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(97)00914-X     Document Type: Article

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