Indium stability on InGaAs during atomic H surface cleaning

Applied Physics Letters

Volumn 92, Issue 17, 2008, Pages

  Aguirre Tostado, F S ^a   Milojevic, M ^a   Hinkle, C L ^a   Vogel, E M ^a   Wallace, R M ^a   McDonnell, S ^b   Hughes, G J ^b  

^a The University of Texas at Dallas   (United States)

^b DUBLIN CITY UNIVERSITY   (Ireland)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; CHEMICAL STABILITY; HIGH ENERGY ELECTRON DIFFRACTION; STOICHIOMETRY; SURFACE CLEANING; X RAY PHOTOELECTRON SPECTROSCOPY;

ATOMIC SURFACE CLEANING; SURFACE STOICHIOMETRY;

SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

EID: 43049135488     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2919047     Document Type: Article

References (21)

1. For example, see, Y. Xuan, P. D. Ye, and T. Shen, Appl. Phys. Lett. 91, 232107 (2007).
2. C. W. Wilmsen, Physics and Chemistry of III-V Compound Semiconductor Interfaces, edited by, C. W. Wilmsen, (Plenum, New York, 1985), pp. 428-438.
3. W. M. Lau, R. N. S. Sodhi, S. Jin, S. Ingrey, N. Puetz, and A. Spring Thorpe, J. Appl. Phys. 67, 768 (1990).
4. L. J. Brillson, M. L. Slade, R. E. Viturro, M. K. Kelly, N. Tache, G. Margaritondo, J. M. Woodall, P. D. Kirchner, G. D. Pettit, and S. L. Wright, Appl. Phys. Lett. 48, 1458 (1986).
5. S. I. J. Ingrey, W. M. Lau, and R. N. S. Sodhi, J. Vac. Sci. Technol. A 7, 1554 (1989).
6. Properties of Lattice-Matched and Strained Indium Gallium Arsenide, edited by, P. Bhattacharya, (Inspec, London, 1993).
7. M. Jaffe and J. Singh, J. Appl. Phys. 65, 329 (1989).
8. E. Garfunkel, T. Gustafsson, P. Lysaght, S. Stemmer, and R. Wallace, Future Fab International 21, 126 (2006).
9. F. S. Aguirre-Tostado, D. Layton, A. Herrera-Gomez, R. M. Wallace, J. Zhu, G. Larrieu, E. Maldonado, W. P. Kirk, and M. Tao, J. Appl. Phys. 102, 084901 (2007).
10. S. Sugata, A. Takamori, N. Takado, K. Asakawa, E. Miyauchi, and H. Hashimoto, J. Vac. Sci. Technol. B 6, 1087 (1988).
11. A. Khatiri, J. M. Ripalda, T. J. Krzyzewski, G. R. Bell, C. F. McConville, and T. S. Jones, Surf. Sci. 548, L1 (2004).
12. C. L. Hinkle, A. M. Sonnet, E. M. Vogel, S. McDonnell, G. J. Hughes, M. Milojevic, B. Lee, F. S. Aguirre-Tostado, K. J. Choi, J. Kim, and R. M. Wallace, Appl. Phys. Lett. 91, 163512 (2007).
13. Omicron Nanotechnology, (see http://www.omicron.de).
14. G. P. Schwartz, J. E. Griffiths, and G. J. Gualtieri, Thin Solid Films 94, 213 (1982).
15. M. Yamada, Y. Ide, and K. Tone, Jpn. J. Appl. Phys., Part 2 31, L1157 (1992).
16. M. Yamada, Jpn. J. Appl. Phys., Part 2 35, L651 (1996).
17. J. A. Schaefer, Appl. Phys. A: Solids Surf. 51, 305 (1990).
18. K. R. Evans, R. Kaspi, J. E. Ehret, M. Skowronski, and C. R. Jones, J. Vac. Sci. Technol. B 13, 1820 (1995).
19. J. A. Schaefer, D. J. Frankel, and G. J. Lapeyre, Z. Phys. B: Condens. Matter 79, 259 (1990).
20. W. Braun, Applied RHEED: Reflection High-Energy Electron Diffraction During Crystal Growth (Springer, Germany, 1999).
21. P. A. Bone, J. M. Ripalda, G. R. Bell, and T. S. Jones, Surf. Sci. 600, 973 (2006).