Comparative study of NH 4 OH and HCl etching behaviours on AlGaN surfaces

Applied Surface Science

Volumn 256, Issue 7, 2010, Pages 2210-2214

  Sohal, Rakesh ^a   Dudek, Piotr ^b   Hilt, Oliver ^c  

^a BRANDENBURG UNIVERSITY OF TECHNOLOGY   (Germany)

^b IHP   (Germany)

^c LEIBNIZ INSTITUT FÜR HÖCHSTFREQUENZTECHNIK   (Germany)

Author keywords

AlGaN GaN heterostructure; Atomic force microscopy; HCl; HEMT; NH 4 OH; Wet etching; X ray photoelectron spectroscopy

Indexed keywords

ALUMINA; ALUMINUM GALLIUM NITRIDE; ALUMINUM OXIDE; AMMONIUM HYDROXIDE; ATOMIC FORCE MICROSCOPY; GALLIUM NITRIDE; HIGH ELECTRON MOBILITY TRANSISTORS; HYDROCHLORIC ACID; III-V SEMICONDUCTORS; PHOTOELECTRONS; PHOTONS; SEMICONDUCTOR ALLOYS; SURFACE ROUGHNESS; WET ETCHING; X RAY PHOTOELECTRON SPECTROSCOPY;

ALGAN/GAN HETEROSTRUCTURES; CARBON SEGREGATION; CHEMICAL TREATMENTS; COMPARATIVE STUDIES; NATIVE OXIDES; NH4OH; SURFACE PREPARATION; SURFACE PREPARATION METHODS;

CHLORINE COMPOUNDS;

EID: 74149089554     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2009.09.075     Document Type: Article

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