Impact of deposition and annealing temperature on material and electrical characteristics of ALD HfO2

Journal of the Electrochemical Society

Volumn 151, Issue 10, 2004, Pages

  Triyoso, D ^a   Liu, R ^a   Roan, D ^a   Ramon, M ^a   Edwards, N V ^a   Gregory, R ^a   Werho, D ^a   Kulik, J ^a   Tam, G ^a   Irwin, E ^a   Wang, X D ^a   La, L B ^a   Hobbs, C ^a   Garcia, R ^b   Baker, J ^c   White Jr , B E ^a   Tobin, P ^a  

^a FREESCALE SEMICONDUCTOR INC   (United States)

^b Dan Noble Center   (United States)

^c Phys Science Research Laboratories   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ATOMIC FORCE MICROSCOPY; CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; DEPOSITION; DIELECTRIC FILMS; FILM GROWTH; FOURIER TRANSFORM INFRARED SPECTROSCOPY; HIGH TEMPERATURE EFFECTS; LEAKAGE CURRENTS; POLYCRYSTALLINE MATERIALS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS; X RAY PHOTOELECTRON SPECTROSCOPY;

ATOMIC LAYER DEPOSITION (ALD); HAFNIUM OXIDE (HFO2); X-RAY REFLECTOMETRY (XRR);

HAFNIUM COMPOUNDS;

EID: 8644235884     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1784821     Document Type: Article

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