Medium range order engineering in amorphous silicon thin films for solid phase crystallization

Journal of Applied Physics

Volumn 113, Issue 19, 2013, Pages

  Law, Felix ^a   Widenborg, Per I ^a   Luther, Joachim ^a   Hoex, Bram ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON (A-SI:H); AMORPHOUS SILICON THIN FILMS; DEPOSITION PRESSURES; FULL WIDTH HALF MAXIMUM; HIGH-ANGLE ANNULAR DARK FIELDS; MEDIUM RANGE ORDER; POLYCRYSTALLINE SILICON (POLY-SI); SOLID-PHASE CRYSTALLIZATION;

AMORPHOUS SILICON; DEPOSITION; ION BOMBARDMENT; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; VAPOR DEPOSITION; X RAY DIFFRACTION;

SILICON;

EID: 84878414058     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4807166     Document Type: Article

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