Structural properties of hot wire a-Si:H films deposited at rates in excess of 100 Å/s

Journal of Applied Physics

Volumn 90, Issue 10, 2001, Pages 5038-5047

  Mahan, A H ^a   Xu, Y ^a   Williamson, D L ^b   Beyer, W ^c   Perkins, J D ^a   Vanecek, M ^d   Gedvilas, L M ^a   Nelson, B P ^a  

^a NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

^b Department of Geology and Geological Engineering   (United States)

^c Forchungszentrum Julich   (Germany)

^d INSTITUTE OF PHYSICS   (Czech Republic)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0035890350     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1407317     Document Type: Article

References (58)

1. See, i.e.. Mater. Res. Soc. Symp. Proc. 557, 105 (1099); and papers within the "high deposition rate" section.
2. S. Guha, NREL/SR-520-24723, 15 (1998).
3. S. J. Jones, X. Deng, T. Liu, and M. Izu, Mater. Res. Soc. Symp. Proc. 507, 113 (1998).
4. A. H. Mahan et al., Mater. Res. Soc. Symp. Proc. 507, 119 (1998).
5. B. P. Nelson, R. S. Crandall, E. Iwaniczko, A. H. Mahan, Q. Wang, Y. Xu, and W. Gao, Mater. Res. Soc. Symp. Proc. 557, 97 (1999).
6. B. P. Nelson, Y. Xu, A. H. Mahan, D. L. Williamson, and R. S. Crandall, Mater. Res. Soc. Symp. Proc. 609, A22.8 (2000).
7. A. H. Mahan, Y. Xu, B. P. Nelson, J. D. Cohen, K. C. Palinginis, R. S. Crandall, and A. C. Gallagher, Appl. Phys. Lett. 78, 3788 (2001).
8. D. L. Williamson, Mater. Res. Soc. Symp. Proc. 377, 251 (1995).
9. A. H. Mahan, E. Iwaniczko, B. P. Nelson, R. C. Reedy, Jr., T. Unold, R. S. Crandall, S. Guha, and J. Yang, AIP Conf. Proc. 394, 27 (1996).
10. A. Poruba, A. Fejfar, Z. Remes, J. Springer, M. Vanecek, J. Kocka, J. Meier, P. Torres, and A. Shah, J. Appl. Phys. 88, 148 (2000).
11. A. H. Mahan, D. L. Williamson, and T. E. Furtak, Mater. Res. Soc. Symp. Proc. 467, 657 (1997).
12. S. Guha, J. Yang, D. L. Williamson, Y. Lubianiker, J. D. Cohen, and A. H. Mahan, Appl. Phys. Lett. 74, 1860 (1999).
13. D. L. Williamson, Mater. Res. Soc. Symp. Proc. 557, 251 (1999).
14. D. Beeman, R. Tsu, and M. F. Thorpe, Phys. Rev. B 32, 874 (1985).
15. A. J. M. Berntsen, Ph.D. thesis, Utrecht University, 1993, p. 32.
16. W. Beyer and H. Wagner, J. Appl. Phys. 53, 8745 (1982).
17. M. B. Schubert, H.-D. Mohring, E. Lotter, and G. H. Bauer, IEEE Trans. Electron Devices 36, 2863 (1989).
18. Q. Wang, E. Iwaniczko, Y. Xu, B. P. Nelson, and A. H. Mahan, Mater. Res. Soc. Symp. Proc. 557, 163 (1999).
19. W. Beyer (private communication).
20. X. Liu, R. O. Pohl, and R. S. Crandall, Mater. Res. Soc. Symp. Proc. 557, 323 (1999).
21. A. H. Mahan and M. Vanecek, AIP Conf. Proc. 234, 195 (1991).
22. W. M. M. Kessels, Ph.D. thesis, Technical University of Eindhoven, 2000, p. 83.
23. E. Bhattacharya and A. H. Mahan, Appl. Phys. Lett. 52, 1587 (1988).
24. R. A. Street, J. Kakalios, and T. M. Hayes, Phys. Rev. B 34, 3030 (1986).
25. A. C. Gallagher, Mater. Res. Soc. Symp. Proc. 70, 3 (1986).
26. A. Matsuda and K. Tanaka, J. Appl. Phys. 60, 2351 (1986).
27. J. Perrin, Y. Takeda, N. Hirano, Y. Takeuchi, and A. Matsuda, Surf. Sci. 210, 114 (1989).
28. E. C. Molenbroek, Ph.D. thesis, University of Colorado, Boulder, CO, 1995.
29. E. C. Molenbroek, A. H. Mahan, and A. C. Gallagher, J. Appl. Phys. 82, 1909 (1997).
30. W. M. M. Kessels, A. H. M. Smets, D. C. Marra, E. S. Aydil, D. C. Schramm, and M. C. M. van de Sanden, Thin Solid Films 383, 154 (2001).
31. A. C. Gallagher, Thin Solid Films (in press).
32. C. C. Tsai, J. G. Shaw, B. Wacker, and J. C. Knights, Mater. Res. Soc. Symp. Proc. 95, 219 (1987).
33. J. Robertson, J. Appl. Phys. 87, 2608 (2000).
34. M. Stutzmann, Philos. Mag. B 60, 531 (1989).
35. A. H. Mahan, A. Mascarenas, D. L. Williamson, and R. S. Crandall, Mater. Res. Soc. Symp. Proc. 118, 641 (1988).
36. A. H. Mahan, P. Menna, and R. Tsu, Appl. Phys. Lett. 51, 1167 (1987).
37. A. H. Mahan, D. L. Williamson, B. P. Nelson, and R. S. Crandall, Sol. Cells 24, 465 (1989).
38. A. H. Mahan, B. P. Nelson, R. S. Crandall, and D. L. Williamson, IEEE Trans. Electron Devices 36, 2859 (1989).
39. 0,'s in Ref. 21 with those obtained by PDS on identically prepared films, as quoted in A. H. Mahan, J. Carapella, B. P. Nelson, R. S. Crandall, and I. Balberg, J. Appl. Phys. 69, 6728 (1991).
40. D. E. Carlson, Appl. Phys. A: Solids Surf. 41, 305 (1986).
41. See D. E. Carlson, in Disordered Semiconductors, edited by M. A. Kastner, M. J. K. Thomas, and S. R. Ovshinsky (Plenum, New York, 1987), p. 613.
42. From Ref. 40, the number of strained bonds on the microvoid surfaces is suggested to increase considerably if the microvoids are NOT hydrogenated.
43. D. E. Aspnes, Proc. SPIE 276, 188 (1981).
44. A given in Ref. 21.
45. M. Ohsawa, T. Hama, T. Akasaka, T. Ichimura, H. Sakai, S. Ishida, and Y. Uchida, Jpn. J. Appl. Phys., Part 2 24, L838 (1985).
46. C. Manfredotti, F. Fizzotti, M. Boero, P. Pastorino, P. Polesello, and E. Vittone, Phys. Rev. B 50, 18046 (1994).
47. C. R. Wronski, Mater. Res. Soc. Symp. Proc. 467, 7 (1997).
48. H. Fritzsche, Mater. Res. Soc. Symp. Proc. 467, 19 (1997).
49. S. Guha, J. Yang, S. J. Jones, Y. Chen, and D. L. Williamson, Appl. Phys. Lett. 61, 1444 (1992).
50. J. Yang, X. Xu, and S. Guha, Mater Res. Soc. Symp. Proc. 336, 687 (1994); This article discusses mainly device degradation versus i layer film deposition conditions. The SAXS results for these i layers are given in Ref. 8.
51. M. Vanecek, Z. Remes, J. Fric, R. S. Crandall, and A. H. Mahan, Proceedings of the 12th European PV Solar Energy Conference, 1994, p. 354.
52. D. L. Williamson (private communication); it is well known that larger scattering features are weighted more heavily in SAXS intensity measurements.
53. Z. Remes, M. Vanecek, A. H. Mahan, and R. S. Crandall, Phys. Rev. B 56, R12710 (1997).
54. See X. Zou, Y. C. Chan, D. P. Webb, Y. W. Lam, Y. F. Hu, C. D. Beling, S. Fung, and H. M. Weng, Phys. Rev. Lett. 84, 769 (2000) and references therein.
55. W. Beyer. Semicond. Semimet. 61, 165 (1999).
56. Y. Wu, J. T. Stephen, D. X. Han, J. M. Rutland, R. S. Crandall, and A. H. Mahan, Phys. Rev. Lett. 77, 2049 (1996).
57. D. Han, NREL Subcontract No. XAK-8-17619-11, Quarterly Report 8/15/00 (unpublished).
58. n bonding.