Structural, defect, and device behavior of hydrogenated amorphous Si near and above the onset of microcrystallinity

Applied Physics Letters

Volumn 74, Issue 13, 1999, Pages 1860-1862

  Guha, S ^a   Yang, J ^a   Williamson, D L ^b   Lubianiker, Y ^c   Cohen, J D ^c   Mahan, A H ^d  

^a United Solar Systems Corp   (United States)

^b Department of Geology and Geological Engineering   (United States)

^c UNIVERSITY OF OREGON   (United States)

^d NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; DEPOSITION; FILM GROWTH; HYDROGENATION; SOLAR CELLS; STAINLESS STEEL; SUBSTRATES; THIN FILMS; X RAY DIFFRACTION ANALYSIS;

LIGHT STABILITY;

AMORPHOUS FILMS;

EID: 0032608065     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.123693     Document Type: Article

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