Kinetic study of solid phase crystallisation of expanding thermal plasma deposited a-Si:H

Thin Solid Films

Volumn 520, Issue 17, 2012, Pages 5820-5825

  Law, F ^a   Hoex, B ^a   Wang, J ^a   Luther, J ^a   Sharma, K ^b   Creatore, M ^b   Van De Sanden, M C M ^b  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b EINDHOVEN UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

Expanding thermal plasma; Kinetics; Polycrystalline silicon thin film solar cell; Solid phase crystallization; X ray diffraction

Indexed keywords

A-SI:H; AVRAMI EXPONENT; COLUMNAR GRAIN STRUCTURE; DYNAMIC DATA; EXPANDING THERMAL PLASMAS; GRAIN QUALITY; HYDROGEN CLUSTERS; HYDROGENATED AMORPHOUS SILICON (A-SI:H) FILMS; IN-SITU X-RAY DIFFRACTION; JOHNSON-MEHL-AVRAMI; KINETIC STUDY; KOLMOGOROV MODEL; NUCLEATION SITES; POLYCRYSTALLINE SILICON THIN FILM; PROCESS STABILITY; SOLID PHASE CRYSTALLIZATION; SOLID-PHASE;

ACTIVATION ENERGY; CRYSTAL MICROSTRUCTURE; DYNAMICS; ENZYME KINETICS; GRAIN SIZE AND SHAPE; HYDROGEN; POLYSILICON;

X RAY DIFFRACTION;

EID: 84861794354     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2012.04.056     Document Type: Article

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